Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes
DC Field | Value | Language |
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dc.contributor.author | Kim, Byung-Jae | - |
dc.contributor.author | Lee, Chongmin | - |
dc.contributor.author | Mastro, Michael A. | - |
dc.contributor.author | Hite, Jennifer K. | - |
dc.contributor.author | Eddy, Charles R., Jr. | - |
dc.contributor.author | Ren, Fan | - |
dc.contributor.author | Pearton, Stephen J. | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-09-06T17:40:56Z | - |
dc.date.available | 2021-09-06T17:40:56Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-07-16 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/107922 | - |
dc.description.abstract | We report that the oxidation of graphene-based highly transparent conductive layers to AlGaN/GaN/AlGaN ultra-violet (UV) light-emitting diodes (LEDs) was suppressed by the use of SiNX passivation layers. Although graphene is considered to be an ideal candidate as the transparent conductive layer to UV-LEDs, oxidation of these layers at high operating temperatures has been an issue. The oxidation is initiated at the un-saturated carbon atoms at the edges of the graphene and reduces the UV light intensity and degrades the current-voltage (I-V) characteristics. The oxidation also can occur at defects, including vacancies. However, GaN-based UV-LEDs deposited with SiNX by plasma-enhanced chemical vapor deposition showed minimal degradation of light output intensity and I-V characteristics because the graphene-based UV transparent conductive layers were shielded from the oxygen molecules. This is a simple and effective approach for maintaining the advantages of graphene conducting layers as electrodes on UV-LEDs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733981] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | SINGLE-LAYER | - |
dc.title | Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1063/1.4733981 | - |
dc.identifier.scopusid | 2-s2.0-84864261690 | - |
dc.identifier.wosid | 000306748000008 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.101, no.3 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 101 | - |
dc.citation.number | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SINGLE-LAYER | - |
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