Current-induced motion of a transverse magnetic domain wall in the presence of spin Hall effect
- Authors
- Seo, Soo-Man; Kim, Kyoung-Whan; Ryu, Jisu; Lee, Hyun-Woo; Lee, Kyung-Jin
- Issue Date
- 9-7월-2012
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.101, no.2
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 101
- Number
- 2
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/107938
- DOI
- 10.1063/1.4733674
- ISSN
- 0003-6951
- Abstract
- We theoretically study current-induced dynamics of a transverse magnetic domain wall in bi-layer nanowires consisting of a ferromagnetic layer on top of a nonmagnetic layer with strong spin-orbit coupling. Domain wall dynamics is characterized by two threshold current densities, J(th)(WB) and J(th)(REV), where J(th)(WB) is a threshold for the chirality switching of the domain wall and J(th)(REV) is another threshold for the reversed domain wall motion caused by spin Hall effect. Domain walls with a certain chirality may move opposite to the electron-flow direction with high speed in the current range J(th)(REV) < J < J(th)(WB) for the system designed to satisfy the conditions J(th)(WB) > J(th)(REV) and alpha > beta, where alpha is the Gilbert damping constant and beta is the nonadiabaticity of spin torque. Micromagnetic simulations confirm the validity of analytical results. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733674]
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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