Nanostructure Ag dots for improving thermal stability of Ag reflector for GaN-based light-emitting diodes
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeon, Joon-Woo | - |
dc.contributor.author | Yum, Woong-Sun | - |
dc.contributor.author | Oh, Semi | - |
dc.contributor.author | Kim, Kyung-Kook | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-06T17:48:21Z | - |
dc.date.available | 2021-09-06T17:48:21Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-07-09 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/107940 | - |
dc.description.abstract | We report the improved thermal stability of Ag reflectors for GaN-based light-emitting diodes (LEDs) using Ag nano-dots (similar to 65-similar to 190 nm in size). The nano-dot Ag samples show much higher reflectance than the Ag only samples. The annealed nano-dot Ag samples exhibit a smoother surface, where the grains contain numerous micro-twins. < 111 > texture becomes more dominantly evolved in the nano-dot Ag samples than in the Ag only samples after annealing. LEDs with the 300 degrees C-annealed nano-dot Ag reflectors exhibit 15%-36% higher output power (at 20 mA) than LEDs with the 300 and 400 degrees C-annealed Ag only reflectors. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737015] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | P-TYPE GAN | - |
dc.subject | OHMIC CONTACTS | - |
dc.subject | LOW-RESISTANCE | - |
dc.subject | THIN-FILMS | - |
dc.subject | SILVER | - |
dc.subject | AGGLOMERATION | - |
dc.subject | GROWTH | - |
dc.title | Nanostructure Ag dots for improving thermal stability of Ag reflector for GaN-based light-emitting diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1063/1.4737015 | - |
dc.identifier.scopusid | 2-s2.0-84863914322 | - |
dc.identifier.wosid | 000306360600015 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.101, no.2 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 101 | - |
dc.citation.number | 2 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | P-TYPE GAN | - |
dc.subject.keywordPlus | OHMIC CONTACTS | - |
dc.subject.keywordPlus | LOW-RESISTANCE | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | SILVER | - |
dc.subject.keywordPlus | AGGLOMERATION | - |
dc.subject.keywordPlus | GROWTH | - |
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