Carrier transport mechanism of strained AlGaN/GaN Schottky contacts
DC Field | Value | Language |
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dc.contributor.author | Nam, Tae-Chul | - |
dc.contributor.author | Jang, Ja-Soon | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-06T18:11:00Z | - |
dc.date.available | 2021-09-06T18:11:00Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-07 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/108062 | - |
dc.description.abstract | Using polarization field effect-based thermionic field emission (PFE-TFE) model based on current-voltage-temperature data, possible carrier transport mechanisms for Pt/Au and Cr/Pd Schottky contacts to Al0.25Ga0.75N/GaN layers were investigated. Thermionic emission (TE) model was also investigated to compare to the PFE-TFE. It was shown that Schottky barrier heights (SBHs) are significantly affected by a polarization field-induced carrier density of the AlGaN layer. In addition, relatively little temperature dependence on the leakage current density of both contacts was found, which is in good agreement with the PFE-TFE model. The results indicate that the TFE is responsible for the current flow across the metal/AlGaN-GaN interface at T >= 293 K. (C) 2012 Elsevier B. V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | PIEZOELECTRIC POLARIZATION | - |
dc.subject | HETEROSTRUCTURE | - |
dc.subject | GAN | - |
dc.subject | DIODES | - |
dc.title | Carrier transport mechanism of strained AlGaN/GaN Schottky contacts | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1016/j.cap.2012.01.010 | - |
dc.identifier.scopusid | 2-s2.0-84860221710 | - |
dc.identifier.wosid | 000303129800013 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.12, no.4, pp.1081 - 1083 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 12 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 1081 | - |
dc.citation.endPage | 1083 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001682610 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | PIEZOELECTRIC POLARIZATION | - |
dc.subject.keywordPlus | HETEROSTRUCTURE | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | DIODES | - |
dc.subject.keywordAuthor | Carrier transport | - |
dc.subject.keywordAuthor | Schottky barrier height | - |
dc.subject.keywordAuthor | AlGaN/GaN | - |
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