Selective chemical etch of gallium nitride by phosphoric acid
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Chongmin | - |
dc.contributor.author | Hite, Jennifer K. | - |
dc.contributor.author | Mastro, Michael A. | - |
dc.contributor.author | Freitas, Jaime A., Jr. | - |
dc.contributor.author | Eddy, Charles R., Jr. | - |
dc.contributor.author | Kim, Hong-Yeol | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-09-06T18:11:40Z | - |
dc.date.available | 2021-09-06T18:11:40Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-07 | - |
dc.identifier.issn | 0734-2101 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/108066 | - |
dc.description.abstract | The authors report on the direct comparison of the chemical etch characteristics on both Ga- and N-face gallium nitride (GaN) by phosphoric acid. First, Ga-face GaN was grown next to N-face GaN by a polarity inversion method in a metal-organic chemical vapor deposition reactor. Micro-photoluminescence, atomic force microscopy, scanning electron microscopy, and micro-Raman spectroscopy were used to analyze the etch characteristics of Ga- and N-face GaN before and after a H3PO4-based chemical etch. Ga-face was chemically stable in a phosphoric acid solution. However, the chemical etch continued proceeding on the N-face GaN due to the weak repulsive force to OH- ions. Dodecagonal nano-pyramids which dramatically enhanced the photoluminescence intensity were observed on N-face GaN after a H3PO4-based chemical etch. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.4719528] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.subject | LIGHT-EMITTING-DIODES | - |
dc.subject | FACE GAN | - |
dc.subject | N-FACE | - |
dc.subject | SURFACE | - |
dc.subject | EXTRACTION | - |
dc.title | Selective chemical etch of gallium nitride by phosphoric acid | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1116/1.4719528 | - |
dc.identifier.scopusid | 2-s2.0-84863680213 | - |
dc.identifier.wosid | 000306142800018 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.30, no.4 | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
dc.citation.volume | 30 | - |
dc.citation.number | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | FACE GAN | - |
dc.subject.keywordPlus | N-FACE | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | EXTRACTION | - |
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