Fabrication and Characterization of Nanocrystalline ZnO Film-Based Heterojunction Diodes on 4H-SiC
- Authors
- Kim, Ji-Hong; Do, Kang-Min; Kim, Jae-Won; Jung, Ji-Chul; Lee, Ji-Hoon; Moon, Byung-Moo; Koo, Sang-Mo
- Issue Date
- 6월-2012
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- ZnO; 4H-SiC; Epitaxial Growth; Heterojunction Diodes
- Citation
- JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.7, no.3, pp.271 - 274
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
- Volume
- 7
- Number
- 3
- Start Page
- 271
- End Page
- 274
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/108194
- DOI
- 10.1166/jno.2012.1298
- ISSN
- 1555-130X
- Abstract
- Nanocrystalline n-ZnO/p-4H-SiC heterojunction diodes were successfully fabricated and characterized. The epitaxially grown ZnO films were obtained by using a pulsed laser deposition (PLD) method. X-ray diffraction (XRD) pole figure analysis showed that the c-oriented ZnO films were grown on 4H-SiC (0001) substrates with in-plane orientation of ZnO [11 (2) over bar0]parallel to 4H-SiC [11 (2) over bar0], which is attributed to the small lattice mismatch of ZnO with 4H-SiC (similar to 5.5%). The ZnO films with nano-sized grains were confirmed by surface morphology analysis. In order to investigate the electrical properties, the Ohmic contact electrodes were formed directly onto the ZnO and 4H-SiC surfaces. Current-voltage characteristics of the heterojunction diodes had a good rectifying behavior with an on/off ratio above 10(8). The current transport mechanisms in different bias regions were also discussed.
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