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Transparent conductive Ga-doped ZnO films and their application in dye-sensitized solar cells

Authors
Kim, Ji-HongLee, Kyung-JuRoh, Ji-HyungSong, Sang-WooPark, Jae-HoYer, In-HyungMoon, Byung-Moo
Issue Date
6월-2012
Publisher
KOREAN PHYSICAL SOC
Keywords
Ga-doped ZnO; Transparent conductive oxide; Dye-sensitized solar cells
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.60, no.12, pp.2025 - 2028
Indexed
SCIE
SCOPUS
KCI
Journal Title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume
60
Number
12
Start Page
2025
End Page
2028
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/108242
DOI
10.3938/jkps.60.2025
ISSN
0374-4884
Abstract
This paper presents transparent conductive Ga-doped ZnO (GZO) films and their application in dye-sensitized solar cells (DSSCs). The GZO thin films were deposited on glass substrates by using pulsed laser deposition (PLD). In order to find the optimal condition, we carried out the deposition at various oxygen pressures and temperatures. The structural, electrical, and optical properties of the GZO thin films were investigated. The c-axis-oriented polycrystalline GZO films were obtained under all conditions. The GZO films deposited under the optimal conditions showed a low sheet resistance of 6.87 Omega/sq and a high optical transmittance of similar to 85%, which are suitable values for DSSCs. The DSSCs were successfully fabricated based on the prepared GZO films with a thin TiO2 blocking layer. The fabricated DSSCs with the GZO transparent electrodes showed a conversion efficiency of 3.96%.
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