Resistive switching properties of amorphous Pr0.7Ca0.3MnO3 films grown on indium tin oxide/glass substrate using pulsed laser deposition method
DC Field | Value | Language |
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dc.contributor.author | Seong, Tae-Geun | - |
dc.contributor.author | Choi, Kyu Bum | - |
dc.contributor.author | Seo, In-Tae | - |
dc.contributor.author | Oh, Joon-Ho | - |
dc.contributor.author | Moon, Ji Won | - |
dc.contributor.author | Hong, Kwon | - |
dc.contributor.author | Nahm, Sahn | - |
dc.date.accessioned | 2021-09-06T19:44:56Z | - |
dc.date.available | 2021-09-06T19:44:56Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-05-21 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/108406 | - |
dc.description.abstract | Amorphous Pr0.7Ca0.3MnO3 (APCMO) films, which were grown on indium tin oxide (ITO)/glass at room temperature (RT), were n-type materials. The APCMO/ITO/glass device exhibited an average transparency of 77% in the visible range with a maximum transparency of 84% at a wavelength of 530 nm. The Pt/APCMO/ITO device showed stable bipolar resistive switching behavior over 200 cycles that did not degrade after 10(5) s at RT. The resistance of the APCMO film decreased in both low- and high-resistance states with increasing device area. The resistive switching behavior of the Pt/APCMO/ITO device can be explained by the trap-charged space-charge-limited current mechanism. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4722797] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | MEMORY | - |
dc.title | Resistive switching properties of amorphous Pr0.7Ca0.3MnO3 films grown on indium tin oxide/glass substrate using pulsed laser deposition method | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Nahm, Sahn | - |
dc.identifier.doi | 10.1063/1.4722797 | - |
dc.identifier.scopusid | 2-s2.0-84861809829 | - |
dc.identifier.wosid | 000304489900034 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.100, no.21 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 100 | - |
dc.citation.number | 21 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | MEMORY | - |
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