Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Byeon, Kyeong-Jae | - |
dc.contributor.author | Cho, Joong-Yeon | - |
dc.contributor.author | Kim, Jinseung | - |
dc.contributor.author | Park, Hyoungwon | - |
dc.contributor.author | Lee, Heon | - |
dc.date.accessioned | 2021-09-06T19:55:31Z | - |
dc.date.available | 2021-09-06T19:55:31Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-05-07 | - |
dc.identifier.issn | 1094-4087 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/108440 | - |
dc.description.abstract | SiNx-based photonic crystal (PhC) patterns were fabricated on the ITO electrode layer of a GaN-based light-emitting diode (LED) device on a patterned sapphire substrate (PSS) by a UV nanoimprint lithography process in order to improve the light extraction of the device. A three-dimensional finite-difference time-domain simulation confirmed that the light extraction of a GaN LED structure on a PSS is enhanced when SiNx PhC patterns are formed on the ITO top layer. From the I-V characteristics, the electrical properties of patterned LED devices with SiNx-based PhC were not degraded compared to the unpatterned LED device, since plasma etching of the p-GaN or the ITO layers was not involved in the patterning process. Additionally, the patterned LED devices with SiNx-based PhCs showed 19%-increased electroluminescence intensity compared with the unpatterned LED device at 445 nm wavelength when a 20 mA current is driven. (C) 2012 Optical Society of America | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | OPTICAL SOC AMER | - |
dc.subject | LIGHT-EMITTING-DIODES | - |
dc.subject | VAPOR-PHASE EPITAXY | - |
dc.subject | EXTRACTION EFFICIENCY | - |
dc.subject | MICROLENS ARRAY | - |
dc.subject | OUTPUT POWER | - |
dc.title | Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Heon | - |
dc.identifier.doi | 10.1364/OE.20.011423 | - |
dc.identifier.scopusid | 2-s2.0-84861140849 | - |
dc.identifier.wosid | 000303879700102 | - |
dc.identifier.bibliographicCitation | OPTICS EXPRESS, v.20, no.10, pp.11423 - 11432 | - |
dc.relation.isPartOf | OPTICS EXPRESS | - |
dc.citation.title | OPTICS EXPRESS | - |
dc.citation.volume | 20 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 11423 | - |
dc.citation.endPage | 11432 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | VAPOR-PHASE EPITAXY | - |
dc.subject.keywordPlus | EXTRACTION EFFICIENCY | - |
dc.subject.keywordPlus | MICROLENS ARRAY | - |
dc.subject.keywordPlus | OUTPUT POWER | - |
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