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Transport and switching behaviors in magnetic tunnel junctions consisting of CoFeB/FeNiSiB hybrid free layers
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, D. H. | - |
| dc.contributor.author | Kim, D. K. | - |
| dc.contributor.author | Cho, J. U. | - |
| dc.contributor.author | Park, S. Y. | - |
| dc.contributor.author | Isogami, S. | - |
| dc.contributor.author | Tsunoda, M. | - |
| dc.contributor.author | Takahashi, M. | - |
| dc.contributor.author | Fullerton, E. E. | - |
| dc.contributor.author | Kim, Y. K. | - |
| dc.date.accessioned | 2021-09-06T20:08:34Z | - |
| dc.date.available | 2021-09-06T20:08:34Z | - |
| dc.date.created | 2021-06-18 | - |
| dc.date.issued | 2012-05-01 | - |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/108461 | - |
| dc.description.abstract | We report the efficacy of CoFeB/FeNiSiB hybrid ferromagnetic layers as free layers in magnetic tunnel junctions. A junction with a CoFeB (2.25 nm)/FeNiSiB (0.75 nm) free layer exhibited a tunneling magnetoresistance ratio and a resistance-area product value of 130% and 25 Omega mu m(2), respectively. The critical current density for spin transfer torque (STT) switching was 2.3 MA/cm(2). This study suggests that the addition of an amorphous FeNiSiB in the free layer enhances the magnetotransport properties. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4709738] | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.subject | BIAS-VOLTAGE-DEPENDENCE | - |
| dc.subject | ROOM-TEMPERATURE | - |
| dc.subject | MAGNETORESISTANCE | - |
| dc.title | Transport and switching behaviors in magnetic tunnel junctions consisting of CoFeB/FeNiSiB hybrid free layers | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kim, Y. K. | - |
| dc.identifier.doi | 10.1063/1.4709738 | - |
| dc.identifier.scopusid | 2-s2.0-84864266211 | - |
| dc.identifier.wosid | 000304109900092 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.111, no.9 | - |
| dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
| dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
| dc.citation.volume | 111 | - |
| dc.citation.number | 9 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | BIAS-VOLTAGE-DEPENDENCE | - |
| dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
| dc.subject.keywordPlus | MAGNETORESISTANCE | - |
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