Graphene as a diffusion barrier for Al and Ni/Au contacts on silicon
DC Field | Value | Language |
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dc.contributor.author | Kim, Hong-Yeol | - |
dc.contributor.author | Lee, Chongmin | - |
dc.contributor.author | Kim, Jihyun | - |
dc.contributor.author | Ren, Fan | - |
dc.contributor.author | Pearton, S. J. | - |
dc.date.accessioned | 2021-09-06T20:11:01Z | - |
dc.date.available | 2021-09-06T20:11:01Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-05 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/108475 | - |
dc.description.abstract | The insertion of chemically vapor deposited graphene layers between Al metallization and Si substrates and between Au and Ni metal layers on Si substrates is shown to provide a significant reduction in spiking and intermixing of the metal contacts and reaction with the Si, where the bilayer graphene was transferred to the samples after the Cu-foil was etched. The graphene prevents reaction between Al and Si up to the temperatures of 700 degrees C and the intermixing of Au and Ni up to the temperatures of at least 600 degrees C. The outstanding performance of the graphene as a metal diffusion barrier will be very useful to improve the stability of the metallizations at elevated temperatures. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.3701711] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.subject | P-TYPE GAN | - |
dc.subject | OHMIC CONTACTS | - |
dc.subject | EPITAXIAL GRAPHENE | - |
dc.subject | PACKAGES | - |
dc.subject | SOLDER | - |
dc.title | Graphene as a diffusion barrier for Al and Ni/Au contacts on silicon | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1116/1.3701711 | - |
dc.identifier.wosid | 000305042000002 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.30, no.3 | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 30 | - |
dc.citation.number | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | P-TYPE GAN | - |
dc.subject.keywordPlus | OHMIC CONTACTS | - |
dc.subject.keywordPlus | EPITAXIAL GRAPHENE | - |
dc.subject.keywordPlus | PACKAGES | - |
dc.subject.keywordPlus | SOLDER | - |
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