Room-temperature ferromagnetism of Cu ion-implanted Ga-doped ZnO
- Authors
- Lee, Jong-Han; Shin, Sangwon; Chae, Keun Hwa; Kim, Donghwan; Song, Jonghan
- Issue Date
- 5월-2012
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Dilute magnetic semiconductor; Ferromagnetic; Copper implantation; ZnO
- Citation
- CURRENT APPLIED PHYSICS, v.12, no.3, pp.924 - 927
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 12
- Number
- 3
- Start Page
- 924
- End Page
- 927
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/108575
- DOI
- 10.1016/j.cap.2011.12.013
- ISSN
- 1567-1739
- Abstract
- 1 MeV Cu2+ ions have been implanted into un-doped ZnO and Ga-doped ZnO films with a dose of 1 x 10(17) ions/cm(2) at room-temperature. Cu ion-implanted Ga-doped ZnO had ferromagnetism at room-temperature and the saturation magnetization of this sample was estimated to be 0.12 mu(B) per Cu, while the Cu ion-implanted un-doped ZnO did not show ferromagnetic behavior. Near-edge X-ray fine structure (NEXAFS) spectroscopy revealed that a partial amount of implanted Cu ions existed as Cu2+ (d(9)) state in Ga-doped ZnO film. On the other hand, almost Cu atoms existed as Cu1+ (d(10)) state in un-doped ZnO film. However, the subsequent annealing at temperature above 800 degrees C on this ferromagnetic sample induced the annihilation of ferromagnetism due to the formation of non-ferromagnetic Cu2O phase. (C) 2012 Published by Elsevier B.V.
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