Properties of ZnO Thin Films Co-Doped with Hydrogen and Fluorine
- Authors
- Kim, Yong Hyun; Kim, Jin Soo; Jeong, Jeung-Hyun; Park, Jong-Keuk; Baik, Young Joon; Lee, Kyeong-Seok; Cheong, Byung-Ki; Kim, Donghwan; Seong, Tae-Yeon; Kim, Won Mok
- Issue Date
- 4월-2012
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Doped ZnO; Fluorine; Hydrogen; rf Magnetron Sputtering; Transparent Conducting Oxide
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.12, no.4, pp.3665 - 3668
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 12
- Number
- 4
- Start Page
- 3665
- End Page
- 3668
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/108808
- DOI
- 10.1166/jnn.2012.5627
- ISSN
- 1533-4880
- Abstract
- ZnO films co-doped with fluorine and hydrogen were prepared on Corning glass by radio frequency magnetron sputtering of ZnO targets with varying amounts of ZnF2 in H-2/Ar gas mixtures of varying H-2 content. The ZnO films' electrical, optical, and structural properties in combination with their compositional properties were investigated. A small addition of H-2 to the sputtering gas caused a drastic increase of Hall mobility with a marginal increase in carrier concentration, indicating an effective passivation of grain boundaries due to hydrogenation. For further increase of H-2 in sputter gas, the Hall mobility remained at a relatively constant level while the carrier concentration increased steadily. Most of the ZnO films co-doped with fluorine and hydrogen showed average transmittance higher than 83% in the 400-800 nm range, while the average absorption coefficients were lower than 600 cm(-1), implying very low absorption loss in these films. It was discovered that the fabrication of ZnO films with a Hall mobility higher than 40 cm(2)/Vs and a very low absorption loss in the visible range is possible by co-doping hydrogen and fluorine.
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