Sub 50 nm Nano-Patterns with Carbon Based Spin-On Organic Hardmask
DC Field | Value | Language |
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dc.contributor.author | Shin, Ju-Hyeon | - |
dc.contributor.author | Yang, Ki-Yeon | - |
dc.contributor.author | Han, Kang-Soo | - |
dc.contributor.author | Kim, Hyeong-Seok | - |
dc.contributor.author | Lee, Heon | - |
dc.date.accessioned | 2021-09-06T22:00:54Z | - |
dc.date.available | 2021-09-06T22:00:54Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-04 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/108918 | - |
dc.description.abstract | Carbon based spin-on organic hardmask (C-SOH) was used as an imprint resin to fabricate sub 50 nm sized patterns. Imprinting of C-SOH was done with a polyurethaneacrylate (PUA) stamp. Patternability and etch resistance of the C-SOH resin was compared to poly(methyl methacrylate) (PMMA). C-SOH can be patterned at the nanosize using imprint lithography and exhibits superior etch resistance, especially for F-based plasmas. Due to the poor etch resistance of imprint resin such as PMMA, it is seldom used as an etch mask to form nano-structures by etching the Si3N4 layer. However, such a nano-structure was able to be formed by etching the Si3N4 layer using C-SOH as an etch mask. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.subject | CURING NANOIMPRINT LITHOGRAPHY | - |
dc.subject | IMPRINT LITHOGRAPHY | - |
dc.subject | SILICON-NITRIDE | - |
dc.subject | FABRICATION | - |
dc.subject | RESOLUTION | - |
dc.title | Sub 50 nm Nano-Patterns with Carbon Based Spin-On Organic Hardmask | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Heon | - |
dc.identifier.doi | 10.1166/jnn.2012.5646 | - |
dc.identifier.wosid | 000305850900076 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.12, no.4, pp.3364 - 3368 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 12 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 3364 | - |
dc.citation.endPage | 3368 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | CURING NANOIMPRINT LITHOGRAPHY | - |
dc.subject.keywordPlus | IMPRINT LITHOGRAPHY | - |
dc.subject.keywordPlus | SILICON-NITRIDE | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | RESOLUTION | - |
dc.subject.keywordAuthor | Carbon Based Spin-On Organic Hardmask (C-SOH) | - |
dc.subject.keywordAuthor | Poly(methyl methacrylate) (PMMA) | - |
dc.subject.keywordAuthor | Etch Resistance | - |
dc.subject.keywordAuthor | Nanoimprint Lithography | - |
dc.subject.keywordAuthor | Polyurethaneacrylate (PUA) | - |
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