Facile synthesis of uniform large-sized InP nanocrystal quantum dots using tris(tert-butyldimethylsilyl)phosphine
- Authors
- Joung, SoMyoung; Yoon, Sungwoo; Han, Chang-Soo; Kim, Youngjo; Jeong, Sohee
- Issue Date
- 30-1월-2012
- Publisher
- SPRINGER
- Keywords
- phosphorus precursor; indium phosphide nanocrystal quantum dot; colloidal synthesis; nontoxic
- Citation
- NANOSCALE RESEARCH LETTERS, v.7, pp.1 - 8
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOSCALE RESEARCH LETTERS
- Volume
- 7
- Start Page
- 1
- End Page
- 8
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/109047
- DOI
- 10.1186/1556-276X-7-93
- ISSN
- 1931-7573
- Abstract
- Colloidal III-V semiconductor nanocrystal quantum dots [NQDs] have attracted interest because they have reduced toxicity compared with II-VI compounds. However, the study and application of III-V semiconductor nanocrystals are limited by difficulties in their synthesis. In particular, it is difficult to control nucleation because the molecular bonds in III-V semiconductors are highly covalent. A synthetic approach of InP NQDs was presented using newly synthesized organometallic phosphorus [P] precursors with different functional moieties while preserving the P-Si bond. Introducing bulky side chains in our study improved the stability while facilitating InP formation with strong confinement at a readily low temperature regime (210A degrees C to 300A degrees C). Further shell coating with ZnS resulted in highly luminescent core-shell materials. The design and synthesis of P precursors for high-quality InP NQDs were conducted for the first time, and we were able to control the nucleation by varying the reactivity of P precursors, therefore achieving uniform large-sized InP NQDs. This opens the way for the large-scale production of high-quality Cd-free nanocrystal quantum dots.
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Collections - College of Engineering > Department of Mechanical Engineering > 1. Journal Articles
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