Role of n-dopant based electron injection layer in n-doped organic light-emitting diodes and its simple alternative
DC Field | Value | Language |
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dc.contributor.author | Park, Young Wook | - |
dc.contributor.author | Choi, Jin Hwan | - |
dc.contributor.author | Park, Tae Hyun | - |
dc.contributor.author | Song, Eun Ho | - |
dc.contributor.author | Kim, Hakkoo | - |
dc.contributor.author | Lee, Hyun Jun | - |
dc.contributor.author | Shin, Se Joong | - |
dc.contributor.author | Ju, Byeong-Kwon | - |
dc.contributor.author | Song, Won Jun | - |
dc.date.accessioned | 2021-09-06T23:13:33Z | - |
dc.date.available | 2021-09-06T23:13:33Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-01-02 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/109106 | - |
dc.description.abstract | We investigate the enhancement mechanism of the electroluminescence (EL) of alkali metal based n-doped organic light-emitting diodes (OLEDs). The dual role of the n-dopant (carrier transport and lowering of the injection barrier) induces a trade-off. When the electron transport layer (ETL) is optimally doped by the n-dopant for the highest conductivity, the amount of n-dopant at the ETL/cathode interface is insufficient to form enough chemical bonds with the cathode for efficient carrier injection. This insufficient amount of n-dopant limits the carrier injection properties. To solve this problem, we demonstrated that the addition of an electron injection layer (EIL) comprised of the n-dopant could increase its presence at the interface and, thereby, improve the carrier injection properties and, consequently, the EL efficiency. Moreover, simply using an alkali-metal alloy (rather than co-deposition) on the n-doped ETL as a cathode, instead of using the additional EIL, greatly improves the EL efficiency of the OLEDs. The alkali-metal alloy cathode increased the interfaced states at the ETL/cathode. The proposed model was confirmed by x-ray photoemission spectroscopy experiments on the alkali-metal n-dopant/electrode interface. (C) 2012 American Institute of Physics. [doi:10.1063/1.3674960] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Role of n-dopant based electron injection layer in n-doped organic light-emitting diodes and its simple alternative | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ju, Byeong-Kwon | - |
dc.identifier.doi | 10.1063/1.3674960 | - |
dc.identifier.scopusid | 2-s2.0-84862946810 | - |
dc.identifier.wosid | 000298966200071 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.100, no.1 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 100 | - |
dc.citation.number | 1 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
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