Fast Concurrent Growth of Ni3Sn4 and Voids During Solid-State Reaction Between Sn-Rich Solder and Ni Substrates
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chung, Bo-Mook | - |
dc.contributor.author | Choi, Jaeho | - |
dc.contributor.author | Huh, Joo-Youl | - |
dc.date.accessioned | 2021-09-06T23:18:02Z | - |
dc.date.available | 2021-09-06T23:18:02Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-01 | - |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/109131 | - |
dc.description.abstract | To simulate the growth of Ni3Sn4 phase layers in Sn-based solder joints with Ni substrates during solid-state aging, Sn/(Cu1-x Ni (x) )(6)Sn-5/Ni and Sn/Ni diffusion couples were aged isothermally at 180A degrees C and 200A degrees C, and the growth kinetics of the (Ni,Cu)(3)Sn-4 and Ni3Sn4 layers in the respective couples were monitored during the isothermal aging. Once the (Ni,Cu)(3)Sn-4 layer was formed at the (Cu,Ni)(6)Sn-5/Ni interface, it grew unexpectedly fast with concurrent growth of voids formed in the Sn layer during prolonged aging at both temperatures. The results obtained from the various types of diffusion couples revealed that the voids formed in the Sn layer were Kirkendall voids, due to the (Ni,Cu)(3)Sn-4 layer growing predominantly at the (Ni,Cu)(3)Sn-4/Ni interface by fast diffusion of Sn across the (Ni,Cu)(3)Sn-4 layer. It is proposed that the accelerated growth of the (Ni,Cu)(3)Sn-4 and Ni3Sn4 layers after the formation of voids in the Sn layer is due to the relaxation of vacancy oversaturation and the enhanced annihilation rate of incoming vacancies in the presence of the voids in the Sn layer. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER | - |
dc.subject | INTERFACIAL REACTIONS | - |
dc.subject | DIFFUSION COUPLES | - |
dc.subject | CROSS-INTERACTION | - |
dc.subject | CU | - |
dc.subject | JOINTS | - |
dc.title | Fast Concurrent Growth of Ni3Sn4 and Voids During Solid-State Reaction Between Sn-Rich Solder and Ni Substrates | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Huh, Joo-Youl | - |
dc.identifier.doi | 10.1007/s11664-011-1736-4 | - |
dc.identifier.scopusid | 2-s2.0-84855466280 | - |
dc.identifier.wosid | 000298352000006 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ELECTRONIC MATERIALS, v.41, no.1, pp.44 - 52 | - |
dc.relation.isPartOf | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.citation.title | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.citation.volume | 41 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 44 | - |
dc.citation.endPage | 52 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | INTERFACIAL REACTIONS | - |
dc.subject.keywordPlus | DIFFUSION COUPLES | - |
dc.subject.keywordPlus | CROSS-INTERACTION | - |
dc.subject.keywordPlus | CU | - |
dc.subject.keywordPlus | JOINTS | - |
dc.subject.keywordAuthor | Solder/Ni joint | - |
dc.subject.keywordAuthor | interfacial reaction | - |
dc.subject.keywordAuthor | Ni3Sn4 | - |
dc.subject.keywordAuthor | Kirkendall void | - |
dc.subject.keywordAuthor | diffusion | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.