Improved Thermal Stability of Ag Ohmic Contacts for GaN-Based Vertical Light-Emitting Diodes Using a Zn Capping Layer
- Authors
- Park, Jae-Seong; Jeon, Joon-Woo; Jin, Sungho; Seong, Tae-Yeon
- Issue Date
- 2012
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, v.15, no.4, pp.H130 - H132
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTROCHEMICAL AND SOLID STATE LETTERS
- Volume
- 15
- Number
- 4
- Start Page
- H130
- End Page
- H132
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/109394
- DOI
- 10.1149/2.002205esl
- ISSN
- 1099-0062
- Abstract
- We report on the improvement of the thermal stability of Ag ohmic contacts for high-power GaN-based vertical light-emitting diodes (LEDs) using a Zn capping layer. The 20-nm-thick Zn capping layer suppresses agglomeration by forming ZnO. Blue LEDs fabricated with the Ag/Zn contacts give higher output power than do LEDs with Ag only contacts. LEDs with the 500 degrees C-annealed Ag/Zn contacts exhibit 34% higher output power (at 20 mA) than LEDs with the 500 degrees C-annealed Ag only contacts. X-ray photoemission spectroscopy measurements are performed to describe the temperature dependence of the electrical properties of LEDs with the Ag/Zn contacts. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.002205esl] All rights reserved.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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