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Effect of redox proteins on the behavior of non-volatile memory

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dc.contributor.authorLee, Ji Hyun-
dc.contributor.authorYew, Seung Chul-
dc.contributor.authorCho, Jinhan-
dc.contributor.authorKim, Youn Sang-
dc.date.accessioned2021-09-07T00:17:12Z-
dc.date.available2021-09-07T00:17:12Z-
dc.date.created2021-06-18-
dc.date.issued2012-
dc.identifier.issn1359-7345-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/109454-
dc.description.abstractWe demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (similar to 11 V) and relatively good endurance properties (similar to over 100 cycles).-
dc.languageEnglish-
dc.language.isoen-
dc.publisherROYAL SOC CHEMISTRY-
dc.subjectCELLS-
dc.titleEffect of redox proteins on the behavior of non-volatile memory-
dc.typeArticle-
dc.contributor.affiliatedAuthorCho, Jinhan-
dc.identifier.doi10.1039/c2cc35959f-
dc.identifier.scopusid2-s2.0-84870013260-
dc.identifier.wosid000311287100025-
dc.identifier.bibliographicCitationCHEMICAL COMMUNICATIONS, v.48, no.98, pp.12008 - 12010-
dc.relation.isPartOfCHEMICAL COMMUNICATIONS-
dc.citation.titleCHEMICAL COMMUNICATIONS-
dc.citation.volume48-
dc.citation.number98-
dc.citation.startPage12008-
dc.citation.endPage12010-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.subject.keywordPlusCELLS-
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