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Observation of electric and magnetic properties in a diluted magnetic semiconductor GaMnAs/GaAs (111)
- Authors
- Park, C. S.; Choi, H. K.; Yang, C. U.; Park, Y. D.; Son, J. Y.; Shon, Yoon
- Issue Date
- 1-12월-2011
- Publisher
- ELSEVIER
- Keywords
- Molecular beam epitaxy; GaAs; Ferromagnetic; Ferroelectric
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.336, no.1, pp.20 - 23
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 336
- Number
- 1
- Start Page
- 20
- End Page
- 23
- ISSN
- 0022-0248
- Abstract
- We report on the ferroelectric and ferromagnetic behaviors of a Mn doped GaAs epilayer grown on a GaAs (111) substrate by molecular beam epitaxy. We investigated the structural, electrical, and ferromagnetic properties of the Mn doped GaAs epilayer by high resolution x-ray diffraction, anomalous Hall effect, and superconducting quantum interference device measurements. We obtained the ferromagnetic and ferroelectric Curie temperature to be 50 K and 350 K. respectively, which were confirmed by the anomalous Hall effect, temperature dependence of magnetization, and tan (5 vs. temperature. Furthermore, we demonstrated ferroelectric switching behaviors of the Mn doped GaAs epilayer by electric force microscopy. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.
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