Axial p-n Nanowire Gated Diodes as a Direct Probe of Surface-Dominated Charge Dynamics in Semiconductor Nanomaterials
DC Field | Value | Language |
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dc.contributor.author | Koo, Tae Woong | - |
dc.contributor.author | Kim, Duk Soo | - |
dc.contributor.author | Lee, Jae-Hyun | - |
dc.contributor.author | Jung, Youn Chai | - |
dc.contributor.author | Lee, Ji-Woong | - |
dc.contributor.author | Yu, Yun Seop | - |
dc.contributor.author | Hwang, Sung Woo | - |
dc.contributor.author | Whang, Dongmok | - |
dc.date.accessioned | 2021-09-07T05:20:16Z | - |
dc.date.available | 2021-09-07T05:20:16Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2011-12-01 | - |
dc.identifier.issn | 1932-7447 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/110938 | - |
dc.description.abstract | Axially doped p-n silicon nanowire (SiNW) gated diodes are fabricated, and their electrical properties are investigated to demonstrate the enhanced surface effects on the nanoscale devices of semiconductor nanomaterials. The fabricated p-n SiNW exhibited clear rectifying characteristics with an ideality factor of similar to 2. More interestingly, the gated p-n SiNW showed a switching behavior as a function of the gate bias with almost complete turn-off of the forward current. The observed ideality factor and gated diode characteristics were explained with surface trap states of the nanowires. Systematic 3D device simulation quantitatively confirms that the surface states are a key factor in determining such surface-dominated characteristics. This work would serve the fundamental and in-depth understanding of the surface properties in the various nanoscale 1D devices. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | SILICON NANOWIRES | - |
dc.subject | CURRENT RECTIFICATION | - |
dc.subject | SINGLE | - |
dc.subject | SI | - |
dc.subject | TRANSPORT | - |
dc.title | Axial p-n Nanowire Gated Diodes as a Direct Probe of Surface-Dominated Charge Dynamics in Semiconductor Nanomaterials | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hwang, Sung Woo | - |
dc.identifier.doi | 10.1021/jp206639b | - |
dc.identifier.scopusid | 2-s2.0-82155179311 | - |
dc.identifier.wosid | 000297195200036 | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICAL CHEMISTRY C, v.115, no.47, pp.23552 - 23557 | - |
dc.relation.isPartOf | JOURNAL OF PHYSICAL CHEMISTRY C | - |
dc.citation.title | JOURNAL OF PHYSICAL CHEMISTRY C | - |
dc.citation.volume | 115 | - |
dc.citation.number | 47 | - |
dc.citation.startPage | 23552 | - |
dc.citation.endPage | 23557 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | SILICON NANOWIRES | - |
dc.subject.keywordPlus | CURRENT RECTIFICATION | - |
dc.subject.keywordPlus | SINGLE | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordPlus | TRANSPORT | - |
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