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Electrically Bistable Properties of Layer-by-Layer Assembled Multilayers Based on Protein Nanoparticles

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dc.contributor.authorKo, Yongmin-
dc.contributor.authorKim, Younghoon-
dc.contributor.authorBaek, Hyunhee-
dc.contributor.authorCho, Jinhan-
dc.date.accessioned2021-09-07T05:26:24Z-
dc.date.available2021-09-07T05:26:24Z-
dc.date.created2021-06-19-
dc.date.issued2011-12-
dc.identifier.issn1936-0851-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/110971-
dc.description.abstractElectrochemical properties of redox proteins, which can cause the reversible changes in the resistance according to their redox reactions in solution, are of the fundamental and practical importance in bioelectrochemical applications. These redox properties often depend on the chemical activity of transition metal ions as cofactors within the active sites of proteins. Here, we demonstrate for the first time that the reversible resistance changes in dried protein films based on ferritin nanoparticles can be caused by the externally applied voltage as a result of charge trap/release of Fe-III/Fe-II redox couples. We also show that one ferritin nanoparticle of about 12 nm size can be operated as a nanoscale-memory device, and furthermore the layer-by-layer assembled protein multilayer devices can be extended to bioinspired electronics with adjustable memory performance via molecular level manipulation.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherAMER CHEMICAL SOC-
dc.subjectNUCLEOPHILIC-SUBSTITUTION-
dc.subjectNONVOLATILE MEMORY-
dc.subjectRESISTIVE MEMORY-
dc.subjectDEVICES-
dc.subjectGROWTH-
dc.subjectFILMS-
dc.titleElectrically Bistable Properties of Layer-by-Layer Assembled Multilayers Based on Protein Nanoparticles-
dc.typeArticle-
dc.contributor.affiliatedAuthorCho, Jinhan-
dc.identifier.doi10.1021/nn2036939-
dc.identifier.scopusid2-s2.0-84555163600-
dc.identifier.wosid000298316700066-
dc.identifier.bibliographicCitationACS NANO, v.5, no.12, pp.9918 - 9926-
dc.relation.isPartOfACS NANO-
dc.citation.titleACS NANO-
dc.citation.volume5-
dc.citation.number12-
dc.citation.startPage9918-
dc.citation.endPage9926-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusNUCLEOPHILIC-SUBSTITUTION-
dc.subject.keywordPlusNONVOLATILE MEMORY-
dc.subject.keywordPlusRESISTIVE MEMORY-
dc.subject.keywordPlusDEVICES-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusFILMS-
dc.subject.keywordAuthorlayer-by-layer assembly-
dc.subject.keywordAuthormultilayers-
dc.subject.keywordAuthorferritin-
dc.subject.keywordAuthorredox-
dc.subject.keywordAuthornonvolatile memory-
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