Electrically Bistable Properties of Layer-by-Layer Assembled Multilayers Based on Protein Nanoparticles
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ko, Yongmin | - |
dc.contributor.author | Kim, Younghoon | - |
dc.contributor.author | Baek, Hyunhee | - |
dc.contributor.author | Cho, Jinhan | - |
dc.date.accessioned | 2021-09-07T05:26:24Z | - |
dc.date.available | 2021-09-07T05:26:24Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2011-12 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/110971 | - |
dc.description.abstract | Electrochemical properties of redox proteins, which can cause the reversible changes in the resistance according to their redox reactions in solution, are of the fundamental and practical importance in bioelectrochemical applications. These redox properties often depend on the chemical activity of transition metal ions as cofactors within the active sites of proteins. Here, we demonstrate for the first time that the reversible resistance changes in dried protein films based on ferritin nanoparticles can be caused by the externally applied voltage as a result of charge trap/release of Fe-III/Fe-II redox couples. We also show that one ferritin nanoparticle of about 12 nm size can be operated as a nanoscale-memory device, and furthermore the layer-by-layer assembled protein multilayer devices can be extended to bioinspired electronics with adjustable memory performance via molecular level manipulation. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | NUCLEOPHILIC-SUBSTITUTION | - |
dc.subject | NONVOLATILE MEMORY | - |
dc.subject | RESISTIVE MEMORY | - |
dc.subject | DEVICES | - |
dc.subject | GROWTH | - |
dc.subject | FILMS | - |
dc.title | Electrically Bistable Properties of Layer-by-Layer Assembled Multilayers Based on Protein Nanoparticles | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Cho, Jinhan | - |
dc.identifier.doi | 10.1021/nn2036939 | - |
dc.identifier.scopusid | 2-s2.0-84555163600 | - |
dc.identifier.wosid | 000298316700066 | - |
dc.identifier.bibliographicCitation | ACS NANO, v.5, no.12, pp.9918 - 9926 | - |
dc.relation.isPartOf | ACS NANO | - |
dc.citation.title | ACS NANO | - |
dc.citation.volume | 5 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 9918 | - |
dc.citation.endPage | 9926 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | NUCLEOPHILIC-SUBSTITUTION | - |
dc.subject.keywordPlus | NONVOLATILE MEMORY | - |
dc.subject.keywordPlus | RESISTIVE MEMORY | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordAuthor | layer-by-layer assembly | - |
dc.subject.keywordAuthor | multilayers | - |
dc.subject.keywordAuthor | ferritin | - |
dc.subject.keywordAuthor | redox | - |
dc.subject.keywordAuthor | nonvolatile memory | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.