An Area-Efficient, Low-VDD, Highly Reliable Multi-Cell Antifuse System Fully Operative in DRAMs
DC Field | Value | Language |
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dc.contributor.author | Son, Jong-Pil | - |
dc.contributor.author | Kim, Jin Ho | - |
dc.contributor.author | Ahn, Woo Song | - |
dc.contributor.author | Han, Seung Uk | - |
dc.contributor.author | Yamada, Satoru | - |
dc.contributor.author | Moon, Byung-Sick | - |
dc.contributor.author | Park, Churoo | - |
dc.contributor.author | Hwang, Hong-Sun | - |
dc.contributor.author | Jang, Seong-Jin | - |
dc.contributor.author | Choi, Joo Sun | - |
dc.contributor.author | Jun, Young-Hyun | - |
dc.contributor.author | Kim, Soo-Won | - |
dc.date.accessioned | 2021-09-07T07:51:23Z | - |
dc.date.available | 2021-09-07T07:51:23Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2011-10 | - |
dc.identifier.issn | 0916-8524 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/111475 | - |
dc.description.abstract | A reliable antifuse scheme has been very hard to build, which has precluded its implementation in DRAM products. We devised a very reliable multi-cell structure to cope with the large process variation in the DRAM-cell-capacitor type antifuse system. The programming current did not rise above 564 mu A even in the nine-cell case. The cumulative distribution of the successful rupture in the multi-cell structure could be curtailed dramatically to less than 15% of the single-cell's case and the recovery problem of programmed cells after the thermal stress (300 degrees C) had disappeared. In addition, we also presented a Post-Package Repair (PPR) scheme that could be directly coupled to the external high-voltage power rail via an additional pin with small protection circuits, saving the chip area otherwise consumed by the internal pump circuitry. A 1 Gbit DDR SDRAM was fabricated using Samsung's advanced 50 nm DRAM technology, successfully proving the feasibility of the proposed antifuse system implemented in it. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG | - |
dc.subject | SCHEME | - |
dc.subject | REPAIR | - |
dc.title | An Area-Efficient, Low-VDD, Highly Reliable Multi-Cell Antifuse System Fully Operative in DRAMs | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Soo-Won | - |
dc.identifier.doi | 10.1587/transele.E94.C.1690 | - |
dc.identifier.wosid | 000295601300027 | - |
dc.identifier.bibliographicCitation | IEICE TRANSACTIONS ON ELECTRONICS, v.E94C, no.10, pp.1690 - 1697 | - |
dc.relation.isPartOf | IEICE TRANSACTIONS ON ELECTRONICS | - |
dc.citation.title | IEICE TRANSACTIONS ON ELECTRONICS | - |
dc.citation.volume | E94C | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 1690 | - |
dc.citation.endPage | 1697 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | SCHEME | - |
dc.subject.keywordPlus | REPAIR | - |
dc.subject.keywordAuthor | DRAM | - |
dc.subject.keywordAuthor | antifuse | - |
dc.subject.keywordAuthor | repair | - |
dc.subject.keywordAuthor | post-package repair | - |
dc.subject.keywordAuthor | recovery | - |
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