Polarization and Space-Charge-Limited Current in III-Nitride Heterostructure Nanowires
DC Field | Value | Language |
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dc.contributor.author | Mastro, Michael A. | - |
dc.contributor.author | Kim, Hong-Youl | - |
dc.contributor.author | Ahn, Jaehui | - |
dc.contributor.author | Simpkins, Blake | - |
dc.contributor.author | Pehrsson, Pehr | - |
dc.contributor.author | Kim, Jihyun | - |
dc.contributor.author | Hite, Jennifer K. | - |
dc.contributor.author | Eddy, Charles R., Jr. | - |
dc.date.accessioned | 2021-09-07T08:03:03Z | - |
dc.date.available | 2021-09-07T08:03:03Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2011-10 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/111540 | - |
dc.description.abstract | An undoped AlGaN/GaN nanowire (NW) demonstrated p-type conductivity solely based on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/GaN facet. A transistor based on this NW displayed a low-voltage transition from ohmic to space-charge-limited conduction. A numerical simulation showed that a highly asymmetric strain exists across the triangular cross section, which creates a doublet peak in the piezoelectric-induced polarization sheet charge at the (000-1) facet. Additionally, there is a strong interplay between the charge at the (000-1) AlGaN/GaN interface with depletion from the three surfaces, as well as an interaction with the opposing polarization fields at two semipolar {-110-1} facets. The charge distribution and resultant conduction regime is highly interdependent on the configuration of the multilayer structure, and it is not amenable to an analytical model. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | INN | - |
dc.title | Polarization and Space-Charge-Limited Current in III-Nitride Heterostructure Nanowires | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1109/TED.2011.2162108 | - |
dc.identifier.scopusid | 2-s2.0-80053208197 | - |
dc.identifier.wosid | 000295100300023 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.10, pp.3401 - 3406 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.title | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.volume | 58 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 3401 | - |
dc.citation.endPage | 3406 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | INN | - |
dc.subject.keywordAuthor | Gallium nitride | - |
dc.subject.keywordAuthor | nanowires (NWs) | - |
dc.subject.keywordAuthor | semiconductor nanostructures | - |
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