ALD and MOCVD of Ga2O3 Thin Films Using the New Ga Precursor Dimethylgallium Isopropoxide, (Me2GaOPr)-Pr-i

Abstract

Thin films of gallium oxide (Ga2O3) are prepared by using a new gallium precursor, dimethylgallium isopropoxide (DMGIP), employing both atomic layer deposition (ALD) and metal-organic (MO)CVD. The gallium precursor DMGIP, a gallium analogue of dimethylaluminum isopropoxide (DMAIP) that has been successfully used for MOCVD and ALD of aluminum oxide, is likewise a non-pyrophoric liquid at room temperature with a reasonably high vapor pressure. Using water as the oxygen source, DMGIP shows an ALD temperature window in the range 280-300 degrees C with a growth rate of similar to 0.3 angstrom per cycle. On the other hand, using oxygen as the reactant gas in the MOCVD of Ga2O3, films are grown in the temperature range 450-625 degrees C with the apparent activation energy of 225.5 kJ mol(-1). This study shows that DMGIP can be utilized as a new source for the preparation of Ga2O3 thin films.