Implicit Continuous Current-Voltage Model for Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Including Interface Traps
DC Field | Value | Language |
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dc.contributor.author | Yu, Yun Seop | - |
dc.contributor.author | Cho, Namki | - |
dc.contributor.author | Hwang, Sung Woo | - |
dc.contributor.author | Ahn, Doyeol | - |
dc.date.accessioned | 2021-09-07T09:58:40Z | - |
dc.date.available | 2021-09-07T09:58:40Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2011-08 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/111915 | - |
dc.description.abstract | An analytic and continuous direct-current model for cylindrical doped surrounding-gate metal-oxide-semiconductor field-effect transistors (SGMOSFETs) including interface-trap charges is presented. Based on the SGMOSFET model, which is valid from undoped to heavily doped channels, a general model for long-channel SGMOSFETs including interface-trap charges is derived. A comparison between the numerical simulations and analytic calculations showed that the proposed model is valid for all operating regions of SGMOSFETs including different interface-trap charges with several dimensions and doping densities. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | MOSFETS | - |
dc.subject | CHANNEL | - |
dc.subject | STACKS | - |
dc.title | Implicit Continuous Current-Voltage Model for Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Including Interface Traps | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hwang, Sung Woo | - |
dc.identifier.doi | 10.1109/TED.2011.2156412 | - |
dc.identifier.scopusid | 2-s2.0-79960847320 | - |
dc.identifier.wosid | 000293708500040 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.8, pp.2520 - 2524 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.title | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.volume | 58 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 2520 | - |
dc.citation.endPage | 2524 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | MOSFETS | - |
dc.subject.keywordPlus | CHANNEL | - |
dc.subject.keywordPlus | STACKS | - |
dc.subject.keywordAuthor | Interface trap | - |
dc.subject.keywordAuthor | SPICE | - |
dc.subject.keywordAuthor | surrounding-gate metal-oxide-semiconductor field-effect transistor (SGMOSFET) | - |
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