Suppression of Leakage Currents in AlGaN/GaN HEMTs by Optimizing the Thermal Ramping Rate during the Ohmic RTP Process
- Authors
- Nam, Ho Jun; Choi, Hong Goo; Ha, Min-Woo; Song, Hong Joo; Roh, Cheong Hyun; Lee, Jun Ho; Hahn, Cheol-Koo; Park, Jung Ho
- Issue Date
- 8월-2011
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- AlGaN/GaN HEMT; RTA or Ohmic ramp rate; Leakage current; Rapid thermal annealing
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.59, no.2, pp.439 - 442
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 59
- Number
- 2
- Start Page
- 439
- End Page
- 442
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/111934
- DOI
- 10.3938/jkps.59.439
- ISSN
- 0374-4884
- Abstract
- In this research, we investigated the effects of ramp rates in the rapid thermal annealing process (RTP) on the drain and the gate leakage currents in AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrates. Varying the ramp rates during the Ohmic alloy process affect leakage currents by one or two orders of magnitude. Atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) analyses show that the AlGAN surfaces (composition, surface states, morphology) are modified due to thermal stress during RTP, which is one of the prime origins of the leakage currents in the devices.
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