The effect of the concentration and oxidation state of Sn on the structural and electrical properties of indium tin oxide nanowires
DC Field | Value | Language |
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dc.contributor.author | Park, Kyung-Soo | - |
dc.contributor.author | Choi, Young-Jin | - |
dc.contributor.author | Kang, Jin-Gu | - |
dc.contributor.author | Sung, Yun-Mo | - |
dc.contributor.author | Park, Jae-Gwan | - |
dc.date.accessioned | 2021-09-07T10:32:55Z | - |
dc.date.available | 2021-09-07T10:32:55Z | - |
dc.date.issued | 2011-07-15 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.issn | 1361-6528 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/111989 | - |
dc.description.abstract | High quality single-crystalline indium tin oxide (ITO) nanowires with controlled Sn contents of up to 32.5 at.% were successfully synthesized via a thermal metal co-evaporation method, based on a vapor-liquid-solid growth mode, at a substrate temperature of as low as 540 degrees C. The high solubility of Sn in the nanowires was explained with the existence of Sn2+ ions along with Sn4+ ions: the coexistence of Sn2+ and Sn4+ ions facilitated their high substitutional incorporation into the In2O3 lattice by relaxing structural and electrical disturbances due to the differences in ionic radii and electrical charges between Sn and In3+ ions. It was revealed that, while the lattice parameter of the ITO nanowires had a minimum value at a Sn content of 6.3 at.%, the electrical resistivity had a minimum value of about 10(-3) Omega cm at a Sn content of 14 at.%. These structural and electrical behaviors were explained by variation in the relative and total amounts of the two species, Sn2+ and Sn4+. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | The effect of the concentration and oxidation state of Sn on the structural and electrical properties of indium tin oxide nanowires | - |
dc.type | Article | - |
dc.publisher.location | 영국 | - |
dc.identifier.doi | 10.1088/0957-4484/22/28/285712 | - |
dc.identifier.scopusid | 2-s2.0-79959277710 | - |
dc.identifier.wosid | 000291468000043 | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.22, no.28 | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 22 | - |
dc.citation.number | 28 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | X-RAY | - |
dc.subject.keywordPlus | LOW-TEMPERATURE | - |
dc.subject.keywordPlus | SOLAR-CELL | - |
dc.subject.keywordPlus | ITO | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | GROWTH | - |
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