Growth of p-CdTe thin films on n-GaN/sapphire
- Authors
- Jung, Younghun; Chun, Seunju; Kim, Donghwan; Kim, Jihyun
- Issue Date
- 1-7월-2011
- Publisher
- ELSEVIER
- Keywords
- CdTe; GaN
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.326, no.1, pp.69 - 72
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 326
- Number
- 1
- Start Page
- 69
- End Page
- 72
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/112021
- DOI
- 10.1016/j.jcrysgro.2011.01.054
- ISSN
- 0022-0248
- Abstract
- CdTe thin film was successfully grown on GaN/Sapphire substrate using a close spaced sublimation (CSS) system for the applications in solar cells. CdTe thin film was characterized by SEM, micro-Raman spectroscopy, and X-ray diffraction. The growth rate was 1 mu m/min. In addition, we confirmed that CdCl2 treatment beneficially influenced the structure and composition of the CdTe thin films. CdCl2 treatment which has been known that it improved the efficiency of the CdS/CdTe solar cells, produced similar positive effects such as increasing the CdTe grain size and reducing the number of pin-holes. The growth of the CdTe thin film by CSS method produced nominal effects on biaxial strain and carrier concentrations in the GaN/Sapphire substrate. The CdTe thin film grown on the GaN/Sapphire substrate holds great promise for use in solar cell applications due to its several advantages. (C) 2011 Elsevier B.V. All rights reserved.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
- College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
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