Neutron irradiation on AlGaN/GaN high electron mobility transistors on SiC substrates
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Byung-Jae | - |
dc.contributor.author | Kim, Hong-Yeol | - |
dc.contributor.author | Kim, Jihyun | - |
dc.contributor.author | Jang, Soohwan | - |
dc.date.accessioned | 2021-09-07T10:51:54Z | - |
dc.date.available | 2021-09-07T10:51:54Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-07-01 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/112035 | - |
dc.description.abstract | Electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) on SiC substrates irradiated with low dose of neutron are reported. AlGaN/GaN HEMTs with 0.5 x 100 mu m(2) gate were irradiated with a dose of 2.8 x 10(11) cm(-2) neutrons and average energy of 9.8 MeV. 10% of drain-source current was reduced right after neutron exposure, but complete recovery of current was observed in 40 day storage at room temperature. This is attributed to self-annealing process which removes unstable mobile defect clusters created by neutron bombardment. Also, neutron damaged sample showed instant recovery under UV light exposure. Fully recovered device was irradiated again with same conditions of neutrons, and similar recovery behavior at room temperature was obtained. (C) 2011 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | HEMTS | - |
dc.subject | GAN | - |
dc.subject | PERFORMANCE | - |
dc.title | Neutron irradiation on AlGaN/GaN high electron mobility transistors on SiC substrates | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2011.01.098 | - |
dc.identifier.wosid | 000293483800046 | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.326, no.1, pp.205 - 207 | - |
dc.relation.isPartOf | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 326 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 205 | - |
dc.citation.endPage | 207 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | HEMTS | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordAuthor | Neutron irradiation | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | SiC | - |
dc.subject.keywordAuthor | High electron mobility transistor | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.