Enhanced light output from vertical light-emitting diodes with an imprinted highly refractive polymer layer
- Authors
- Byeon, Kyeong-Jae; Park, Hyoungwon; Cho, Joong-Yeon; Lee, Seong-Hwan; Lee, Sang Youl; Song, June O.; Lee, Heon
- Issue Date
- 7월-2011
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Vertical light-emitting diodes; Nanoimprint; Polymer pattern with a high refractive index; Light extraction efficiency
- Citation
- CURRENT APPLIED PHYSICS, v.11, no.4, pp.S147 - S150
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 11
- Number
- 4
- Start Page
- S147
- End Page
- S150
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/112044
- DOI
- 10.1016/j.cap.2010.12.040
- ISSN
- 1567-1739
- Abstract
- Hexagonal arrays of submicron polymer patterns with a high refractive index were fabricated on a vertical light-emitting diode (LED) device by means of nanoimprint lithography (NIL) to improve the light extraction efficiency. An organic-inorganic hybrid resin containing a polymeric titanium dioxide precursor was spin-coated on the n-GaN top layer of a vertical LED wafer. The coated layer was then imprinted for 10 min with an elastomeric polydimethylsiloxane stamp at 200 degrees C and 5 atm. The NIL process formed pillar patterns on the n-GaN layer of the vertical LED wafer. The pillar patterns have a high refractive index (n approximate to 2.0) in the visible wavelength range; they also have a diameter of 200 nm and a pitch of 700 nm. The light output power of the patterned vertical LED device is 28% greater than that of a non-patterned vertical LED device with a driving current of 350 mA. The I-V characteristics of the vertical LED device confirm that the patterning process induces no electric degradation. (C) 2011 Elsevier B. V. All rights reserved.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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