Thermally Stable and Reflective RhZn/Ag Ohmic Contacts to p-type GaN for Near-UV Flip-chip Light-emitting Diodes
DC Field | Value | Language |
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dc.contributor.author | Park, Seong-Han | - |
dc.contributor.author | Jeon, Joon-Woo | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.contributor.author | Oh, Jeong-Tak | - |
dc.date.accessioned | 2021-09-07T11:08:06Z | - |
dc.date.available | 2021-09-07T11:08:06Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-07 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/112127 | - |
dc.description.abstract | We investigated R.h-Zn solid solution (3 nm)/Ag(200 nm) schemes in order to produce thermally stable and low-resistance p-type Ohmic reflectors for high-performance flip-chip light-emitting diodes (LEDs). The Rh-Zn solid solution/Ag contacts show a specific contact resistance of 1.2 x 10(-4) Omega cm(2) and a reflectance of about 78% at a wavelength of 395 nm when annealed at 500 degrees C for 1 min in air. Scanning electron microscopy results show that unlike Ag only contacts, the Rh-Zn solid solution/Ag contacts experience insignificant morphological degradation even after annealing at 500 C for 1 min. Near-UV InGaN/GaN LEDs (1200 x 600 mu m(2) in chip size) fabricated with the annealed Rh-Zn solid solution/Ag reflectors give a forward-bias voltage of 3.43 V at an injection current of 80 mA, which is lower than that (3.65 V) of LEDs with Ag only reflectors. LEDs with the annealed RhZn solid solution/Ag reflectors exhibit 43% higher light output power (at 80 mA) than the LEDs with annealed Ag contacts. X-ray photoemission spectroscopy examinations were performed to investigate possible Ohmic formation behaviors. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | LOW-RESISTANCE | - |
dc.subject | AG | - |
dc.subject | FABRICATION | - |
dc.subject | SURFACES | - |
dc.subject | STATE | - |
dc.subject | OXIDE | - |
dc.subject | LEDS | - |
dc.subject | AU | - |
dc.title | Thermally Stable and Reflective RhZn/Ag Ohmic Contacts to p-type GaN for Near-UV Flip-chip Light-emitting Diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.3938/jkps.59.156 | - |
dc.identifier.scopusid | 2-s2.0-79960600778 | - |
dc.identifier.wosid | 000292860000030 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.59, no.1, pp.156 - 160 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 59 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 156 | - |
dc.citation.endPage | 160 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001572541 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | LOW-RESISTANCE | - |
dc.subject.keywordPlus | AG | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | SURFACES | - |
dc.subject.keywordPlus | STATE | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | LEDS | - |
dc.subject.keywordPlus | AU | - |
dc.subject.keywordAuthor | Light-emitting diode | - |
dc.subject.keywordAuthor | Ohmic reflector | - |
dc.subject.keywordAuthor | Ag | - |
dc.subject.keywordAuthor | Rhodium-zinc solid solution | - |
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