Effect of oxygen plasma-induced current blocking on the performance of GaN-based vertical light-emitting diodes
DC Field | Value | Language |
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dc.contributor.author | Lee, Sang Youl | - |
dc.contributor.author | Choi, Kwang Ki | - |
dc.contributor.author | Jeong, Hwan Hee | - |
dc.contributor.author | Kim, Eun Joo | - |
dc.contributor.author | Song, June O. | - |
dc.contributor.author | Jeon, Joon-Woo | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-07T11:12:19Z | - |
dc.date.available | 2021-09-07T11:12:19Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-07 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/112149 | - |
dc.description.abstract | We investigated the effect of O-2 plasma-induced current blocking regions (O-2-CBRs) on the performance of GaN-based vertical light-emitting diodes (VLEDs) as a function of the O-2 plasma rf power. The VLEDs fabricated with the O-2-CBRs give forward voltages in the range 3.41-3.48 V at 350 mA, which are slightly higher than those in the case of VLEDs with and without SiO2 current-blocking layers (CBLs). The output powers of VLEDs with O-2-CBRs for rf powers of 50 and 100 W are 400.2 and 399.4 mW, respectively, which are slightly higher than those of the VLEDs with SiO2 CBLs. Indium tin oxide (ITO)-based contacts to p-GaN show rectifying behaviors with Schottky barrier heights of 1.89 and 2.78 eV, when treated at rf powers of 50 and 100 W, respectively. X-ray photoemission spectroscopy (XPS) results show that for the samples treated at 50 W, the Ga 2p core level moves toward the higher binding-energy side as compared to that of the reference sample without plasma treatment. On the basis of the electrical characteristics and XPS results, we state that the O-2-CBR effect is due to the generation of donor-like defects at the p-GaN surface. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3607315] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.subject | LASER LIFT-OFF | - |
dc.subject | N-GAN | - |
dc.subject | INGAN | - |
dc.subject | SAPPHIRE | - |
dc.subject | CONTACTS | - |
dc.subject | SURFACE | - |
dc.subject | LAYERS | - |
dc.subject | POWER | - |
dc.subject | INN | - |
dc.title | Effect of oxygen plasma-induced current blocking on the performance of GaN-based vertical light-emitting diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1116/1.3607315 | - |
dc.identifier.scopusid | 2-s2.0-80051892693 | - |
dc.identifier.wosid | 000293854800012 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.29, no.4 | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 29 | - |
dc.citation.number | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LASER LIFT-OFF | - |
dc.subject.keywordPlus | N-GAN | - |
dc.subject.keywordPlus | INGAN | - |
dc.subject.keywordPlus | SAPPHIRE | - |
dc.subject.keywordPlus | CONTACTS | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | LAYERS | - |
dc.subject.keywordPlus | POWER | - |
dc.subject.keywordPlus | INN | - |
dc.subject.keywordAuthor | gallium compounds | - |
dc.subject.keywordAuthor | III-V semiconductors | - |
dc.subject.keywordAuthor | light emitting diodes | - |
dc.subject.keywordAuthor | plasma materials processing | - |
dc.subject.keywordAuthor | Schottky barriers | - |
dc.subject.keywordAuthor | wide band gap semiconductors | - |
dc.subject.keywordAuthor | X-ray photoelectron spectra | - |
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