Air-Stable, Hysteresis-Free Organic Complementary Inverters Produced by the Neutral Cluster Beam Deposition Method
DC Field | Value | Language |
---|---|---|
dc.contributor.author | An, Min-Jun | - |
dc.contributor.author | Seo, Hoon-Seok | - |
dc.contributor.author | Zhang, Ying | - |
dc.contributor.author | Oh, Jeong-Do | - |
dc.contributor.author | Choi, Jong-Ho | - |
dc.date.accessioned | 2021-09-07T11:34:23Z | - |
dc.date.available | 2021-09-07T11:34:23Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-06-16 | - |
dc.identifier.issn | 1932-7447 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/112219 | - |
dc.description.abstract | We designed and realized ideal organic complementary metal oxide semiconductor (CMOS) inverters through integration of unipolar p- and n-type organic field-effect transistors (OFETs) produced by the neutral cluster beam deposition (NCBD) method. The two high-performance, top-contact OFETs with multidigitated, long channel-width geometry were based upon hole-transporting pentacene and electron-transporting N,N'-ditridecylperylene-3,4,9,10-tetra-carboxylic diimide (P13) deposited on poly(methyl methacrylate) (PMMA) modified SiO2 substrates. Due to the well-balanced, high hole and electron mobilities of 0.38 and 0.19 cm(2)/(V s), low trap densities, and good coupling between p- and n-type OFETs, the hysteresis-free organic CMOS inverters demonstrated sharp inversions and high gains of similar to 15 in the first and third quadrants of the voltage transfer curves, and long-term operational stability under ambient conditions. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | FABRICATION | - |
dc.title | Air-Stable, Hysteresis-Free Organic Complementary Inverters Produced by the Neutral Cluster Beam Deposition Method | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choi, Jong-Ho | - |
dc.identifier.doi | 10.1021/jp202141h | - |
dc.identifier.scopusid | 2-s2.0-80054984650 | - |
dc.identifier.wosid | 000291339000056 | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICAL CHEMISTRY C, v.115, no.23, pp.11763 - 11767 | - |
dc.relation.isPartOf | JOURNAL OF PHYSICAL CHEMISTRY C | - |
dc.citation.title | JOURNAL OF PHYSICAL CHEMISTRY C | - |
dc.citation.volume | 115 | - |
dc.citation.number | 23 | - |
dc.citation.startPage | 11763 | - |
dc.citation.endPage | 11767 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | FABRICATION | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.