High-Voltage Schottky Barrier Diode on Silicon Substrate
DC Field | Value | Language |
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dc.contributor.author | Ha, Min-Woo | - |
dc.contributor.author | Roh, Cheong Hyun | - |
dc.contributor.author | Hwang, Dae Won | - |
dc.contributor.author | Choi, Hong Goo | - |
dc.contributor.author | Song, Hong Joo | - |
dc.contributor.author | Lee, Jun Ho | - |
dc.contributor.author | Park, Jung Ho | - |
dc.contributor.author | Seok, Ogyun | - |
dc.contributor.author | Lim, Jiyong | - |
dc.contributor.author | Han, Min-Koo | - |
dc.contributor.author | Hahn, Cheol-Koo | - |
dc.date.accessioned | 2021-09-07T11:44:59Z | - |
dc.date.available | 2021-09-07T11:44:59Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-06 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/112272 | - |
dc.description.abstract | New GaN Schottky barrier diodes (SBDs) on Si substrates are proposed to achieve a high-breakdown voltage. We have fabricated GaN SBDs using doped GaN/unintentionally doped (UID) GaN because doped GaN with the thickness of 200nm is suitable for high-current operation. The 1-mu m-deep mesa and low-temperature annealing of ohmic contacts suppress the leakage current of GaN SBDs. Annealing of Schottky contacts also improves the interface between a Schottky contact and GaN. Annealing of ohmic contacts at 670 degrees C yields the low leakage current of 2.8 nA through the surface and the buffer. When the anode-cathode distance is 5 mu m, the fabricated GaN SBD successfully achieves a low forward voltage drop of 1.3 V at 100 A/cm(2), low on-resistance of 4.00m Omega cm(2), and the low leakage current of 0.6 A/cm(2) at -100 V. The measured breakdown voltage of GaN SBDs is approximately 400 V. (C) 2011 The Japan Society of Applied Physics | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | ALGAN/GAN | - |
dc.subject | LEAKAGE | - |
dc.title | High-Voltage Schottky Barrier Diode on Silicon Substrate | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jung Ho | - |
dc.identifier.doi | 10.1143/JJAP.50.06GF17 | - |
dc.identifier.scopusid | 2-s2.0-79959484240 | - |
dc.identifier.wosid | 000291748900049 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.6 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 50 | - |
dc.citation.number | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ALGAN/GAN | - |
dc.subject.keywordPlus | LEAKAGE | - |
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