Effect of many-body correlations on mesoscopic charge relaxation
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Minchul | - |
dc.contributor.author | Lopez, Rosa | - |
dc.contributor.author | Choi, Mahn-Soo | - |
dc.contributor.author | Jonckheere, Thibaut | - |
dc.contributor.author | Martin, Thierry | - |
dc.date.accessioned | 2021-09-07T12:24:50Z | - |
dc.date.available | 2021-09-07T12:24:50Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-05-12 | - |
dc.identifier.issn | 1098-0121 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/112452 | - |
dc.description.abstract | We investigate nonperturbatively the charge relaxation resistance and quantum capacitance in a coherent RC circuit in the strong-coupling regime. We find that the many-body correlations break the universality in the charge relaxation resistance: (i) The charge relaxation resistance has peaks at finite frequencies Gamma*/(h) over bar, where Gamma* is an effective level broadening, and (ii) the zero-frequency resistance deviates from the universal value when the Zeeman splitting is comparable to Gamma*. This behavior becomes even more prominent in the Kondo regime. The observed features are ascribed to the generation of particle-hole excitations in the contacts accomplished by spin-flip processes in the dot. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER PHYSICAL SOC | - |
dc.subject | RENORMALIZATION-GROUP | - |
dc.subject | FREQUENCY-DEPENDENCE | - |
dc.subject | SMALL CONDUCTORS | - |
dc.subject | SHOT-NOISE | - |
dc.subject | CAPACITANCE | - |
dc.subject | TRANSPORT | - |
dc.subject | CIRCUIT | - |
dc.title | Effect of many-body correlations on mesoscopic charge relaxation | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choi, Mahn-Soo | - |
dc.identifier.doi | 10.1103/PhysRevB.83.201304 | - |
dc.identifier.scopusid | 2-s2.0-79961110603 | - |
dc.identifier.wosid | 000290521700001 | - |
dc.identifier.bibliographicCitation | PHYSICAL REVIEW B, v.83, no.20 | - |
dc.relation.isPartOf | PHYSICAL REVIEW B | - |
dc.citation.title | PHYSICAL REVIEW B | - |
dc.citation.volume | 83 | - |
dc.citation.number | 20 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | RENORMALIZATION-GROUP | - |
dc.subject.keywordPlus | FREQUENCY-DEPENDENCE | - |
dc.subject.keywordPlus | SMALL CONDUCTORS | - |
dc.subject.keywordPlus | SHOT-NOISE | - |
dc.subject.keywordPlus | CAPACITANCE | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | CIRCUIT | - |
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