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Influence of interface state in Fe/MgO/Fe magnetic tunnel junction system: C modified interfaces-a first principle study
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Wang, T. X. | - |
| dc.contributor.author | Li, Y. | - |
| dc.contributor.author | Lee, K. J. | - |
| dc.contributor.author | Cho, J. U. | - |
| dc.contributor.author | Kim, D. K. | - |
| dc.contributor.author | Noh, S. J. | - |
| dc.contributor.author | Kim, Y. K. | - |
| dc.date.accessioned | 2021-09-07T13:20:04Z | - |
| dc.date.available | 2021-09-07T13:20:04Z | - |
| dc.date.created | 2021-06-14 | - |
| dc.date.issued | 2011-04-15 | - |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/112664 | - |
| dc.description.abstract | The Fe/MgO/Fe magnetic tunnel junction with C modified interfaces has been studied based on the first principle density function theory method under a finite bias voltage for thin (five layers) and thick (ten layers) MgO barriers. Positive and negative tunneling magnetic resistance (TMR) ratios are obtained as a function of the interface structure. We found that the tunneling conductance is highly nonlinear for asymmetric systems with C at one side of the barrier, and even a sign reversal of the TMR as a function of the bias was found to be in agreement with experiments. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3575337] | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.subject | ROOM-TEMPERATURE | - |
| dc.subject | MAGNETORESISTANCE | - |
| dc.subject | TRANSPORT | - |
| dc.title | Influence of interface state in Fe/MgO/Fe magnetic tunnel junction system: C modified interfaces-a first principle study | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Lee, K. J. | - |
| dc.contributor.affiliatedAuthor | Kim, Y. K. | - |
| dc.identifier.doi | 10.1063/1.3575337 | - |
| dc.identifier.scopusid | 2-s2.0-79955737976 | - |
| dc.identifier.wosid | 000290047000084 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.109, no.8 | - |
| dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
| dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
| dc.citation.volume | 109 | - |
| dc.citation.number | 8 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
| dc.subject.keywordPlus | MAGNETORESISTANCE | - |
| dc.subject.keywordPlus | TRANSPORT | - |
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