Current-induced magnetization switching of synthetic antiferromagnetic free layer in magnetic tunnel junctions
DC Field | Value | Language |
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dc.contributor.author | Lee, Seo-Won | - |
dc.contributor.author | Lee, Kyung-Jin | - |
dc.date.accessioned | 2021-09-07T13:26:13Z | - |
dc.date.available | 2021-09-07T13:26:13Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-04-01 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/112680 | - |
dc.description.abstract | Spin transport in a magnetic tunnel junction with a synthetic antiferromagnetic (SAF) free layer is investigated using the drift-diffusion model. Although the diffusive transport is inappropriate for the MgO tunnel barrier, the drift-diffusion model is found to capture the core features of in-plane spin-transfer torque (STT) through the tunnel barrier, and more importantly, it can describe non-negligible STT exerting on two ferromagnets in a SAF-free layer. STT in a SAF-free layer substantially changes the magnetization dynamics and induces a shift of the critical switching current. STT in a SAF-free layer suppresses current-induced parallel-to-antiparallel switching, whereas it encourages antiparallel-to-parallel switching. (C) 2011 American Institute of Physics. [doi:10.1063/1.3562214] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | SPIN-TRANSFER-TORQUE | - |
dc.subject | TO-PLANE-MAGNETORESISTANCE | - |
dc.subject | GIANT MAGNETORESISTANCE | - |
dc.subject | VOLTAGE-DEPENDENCE | - |
dc.subject | MULTILAYER | - |
dc.subject | ENHANCEMENT | - |
dc.subject | EXCITATION | - |
dc.subject | INTERFACES | - |
dc.subject | TRANSPORT | - |
dc.subject | SYSTEMS | - |
dc.title | Current-induced magnetization switching of synthetic antiferromagnetic free layer in magnetic tunnel junctions | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Kyung-Jin | - |
dc.identifier.doi | 10.1063/1.3562214 | - |
dc.identifier.wosid | 000289952100149 | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.109, no.7 | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 109 | - |
dc.citation.number | 7 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SPIN-TRANSFER-TORQUE | - |
dc.subject.keywordPlus | TO-PLANE-MAGNETORESISTANCE | - |
dc.subject.keywordPlus | GIANT MAGNETORESISTANCE | - |
dc.subject.keywordPlus | VOLTAGE-DEPENDENCE | - |
dc.subject.keywordPlus | MULTILAYER | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordPlus | EXCITATION | - |
dc.subject.keywordPlus | INTERFACES | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | SYSTEMS | - |
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