Improved Electrostatic Discharge Protection in GaN-Based Vertical Light-Emitting Diodes by an Internal Diode
DC Field | Value | Language |
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dc.contributor.author | Jeong, Hwan Hee | - |
dc.contributor.author | Lee, Sang Youl | - |
dc.contributor.author | Bae, Jung-Hyeok | - |
dc.contributor.author | Choi, Kwang Ki | - |
dc.contributor.author | Song, June-O | - |
dc.contributor.author | Son, Sung Jin | - |
dc.contributor.author | Lee, Yong-Hyun | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-07T13:27:45Z | - |
dc.date.available | 2021-09-07T13:27:45Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-04-01 | - |
dc.identifier.issn | 1041-1135 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/112688 | - |
dc.description.abstract | We first fabricated GaN-based vertical light-emitting diodes (LEDs) with electrostatic discharge (ESD) protection internal diode. Despite the reduced emitting area due to the internal diode, the LEDs with the internal diode give a forward voltage of 3.42 V at 350 mA similar to that (3.40) of LEDs without the internal diode. It is shown that the output power of the LEDs with the internal diode is reduced by about 6% at 350 mA compared to reference LEDs without the internal diode. It is, however, further shown that the LEDs without the internal diode give a yield of 0% at the reverse voltages above 400 V, while the LEDs with the internal diode show a yield of similar to 90% at reverse voltages of 2-4 kV. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | NITRIDE-BASED LEDS | - |
dc.subject | ESD PROTECTION | - |
dc.subject | VOLTAGE | - |
dc.title | Improved Electrostatic Discharge Protection in GaN-Based Vertical Light-Emitting Diodes by an Internal Diode | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1109/LPT.2011.2106204 | - |
dc.identifier.scopusid | 2-s2.0-79952980032 | - |
dc.identifier.wosid | 000288463300002 | - |
dc.identifier.bibliographicCitation | IEEE PHOTONICS TECHNOLOGY LETTERS, v.23, no.7, pp.423 - 425 | - |
dc.relation.isPartOf | IEEE PHOTONICS TECHNOLOGY LETTERS | - |
dc.citation.title | IEEE PHOTONICS TECHNOLOGY LETTERS | - |
dc.citation.volume | 23 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 423 | - |
dc.citation.endPage | 425 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | NITRIDE-BASED LEDS | - |
dc.subject.keywordPlus | ESD PROTECTION | - |
dc.subject.keywordPlus | VOLTAGE | - |
dc.subject.keywordAuthor | Electrostatic discharge (ESD) protection | - |
dc.subject.keywordAuthor | gallium nitride | - |
dc.subject.keywordAuthor | vertical light-emitting diodes (LEDs) | - |
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