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Room-Temperature Charge Stability Modulated by Quantum Effects in a Nanoscale Silicon Island

Authors
Shin, S. J.Lee, J. J.Kang, H. J.Choi, J. B.Yang, S. -R EricTakahashi, Y.Hasko, D. G.
Issue Date
4월-2011
Publisher
AMER CHEMICAL SOC
Keywords
Single-electron transport; nanoscale silicon dot; Coulomb blockade; room-temperature charge stability; quantum effects
Citation
NANO LETTERS, v.11, no.4, pp.1591 - 1597
Indexed
SCIE
SCOPUS
Journal Title
NANO LETTERS
Volume
11
Number
4
Start Page
1591
End Page
1597
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/112773
DOI
10.1021/nl1044692
ISSN
1530-6984
Abstract
We report on transport measurement performed on a room-temperature-operating ultrasrnall Coulomb blockade devices with a silicon island of sub5 nm. The charge stability at 300K exhibits a substantial change in slopes and diagonal size of each successive Coulomb diamond, but remarkably its main feature persists even at low temperature down to 5.3K except for additional Coulomb peak splitting. This key feature of charge stability with additional fine structures of Coulomb peaks are successfully modeled by including the interplay between Coulomb interaction, valley splitting, and strong quantum confinement, which leads to several low-energy many-body excited states for each dot occupancy. These excited states become enhanced in the sub5 nm ultrasmall scale and persist even at 300K in the form of cluster, leading to the substantial modulation of charge stability.
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