Vertical conduction behavior through atomic graphene device under transverse electric field
DC Field | Value | Language |
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dc.contributor.author | Lee, Yun-Hi | - |
dc.contributor.author | Kim, Yoon-Joong | - |
dc.contributor.author | Lee, J-H. | - |
dc.date.accessioned | 2021-09-07T13:53:04Z | - |
dc.date.available | 2021-09-07T13:53:04Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-03-28 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/112824 | - |
dc.description.abstract | Many studies have characterized disordered graphene layers as variable-range hopping and activated hopping conduction for a graphene structure with planar left and right electrodes. We report the electrical transport measurements of atomic-thick-graphene with top and bottom Ti/Pt electrodes. In the vertical device of metal-graphene-metal under a transverse electric field, the current at the low field or high temperature was explained by bulk-limited conduction, so called Ohmic current. On the other hand, space-charge-limited-conduction dominated at low temperatures or under high fields. The estimated trap concentration for the high field or low temperature conduction was approximately 3.7 x 10(17) cm(-3), and from a cessation of the power law dependence in the J-V characteristics it was determined that the onset of failure breakdown of the vertical GL structure began after dissipating power of 2.7 x 10(12) W m(-3). (C) 2011 American Institute of Physics. [doi:10.1063/1.3569722] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | BILAYER GRAPHENE | - |
dc.title | Vertical conduction behavior through atomic graphene device under transverse electric field | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Yun-Hi | - |
dc.identifier.doi | 10.1063/1.3569722 | - |
dc.identifier.scopusid | 2-s2.0-79953749323 | - |
dc.identifier.wosid | 000289153600073 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.98, no.13 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 98 | - |
dc.citation.number | 13 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | BILAYER GRAPHENE | - |
dc.subject.keywordAuthor | Graphene | - |
dc.subject.keywordAuthor | nanodevice | - |
dc.subject.keywordAuthor | nanoelectronics | - |
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