Color emission and dielectric properties of Eu-doped Gd2O3 gate oxide thin films
DC Field | Value | Language |
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dc.contributor.author | Choi, Sungho | - |
dc.contributor.author | Park, Byung-Yoon | - |
dc.contributor.author | Ahn, Taek | - |
dc.contributor.author | Kim, Ji Young | - |
dc.contributor.author | Hong, Chang Seop | - |
dc.contributor.author | Yi, Mi Hye | - |
dc.contributor.author | Jung, Ha-Kyun | - |
dc.date.accessioned | 2021-09-07T14:16:56Z | - |
dc.date.available | 2021-09-07T14:16:56Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-03-01 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/112874 | - |
dc.description.abstract | High-k Gd2O3 used for thin film transistor (TFT) gate insulators has been synthesized via a simple solution process. Phase analysis and capacitive performance reveal that a high dielectric constant of similar to 20 and a low leakage current level of <10(-8) A/cm(2) at 1 MV/cm with a good transparency under the visible wavelength region are readily produced by the sol-gel method. Eu3+ doping leads to an increased dielectric constant induced by the additional electric dipole transition, which is evidently visualized by the photoluminescence behavior and/or by the defect-controlled thin film microstructures. Thus, the solution-processed (Gd,Eu)(2)O-3 film is a viable gate insulator to be considered for the proposed "color emissive" switching devices as well as for the low power-driven TFT devices. (C) 2010 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | FABRICATION | - |
dc.title | Color emission and dielectric properties of Eu-doped Gd2O3 gate oxide thin films | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, Chang Seop | - |
dc.identifier.doi | 10.1016/j.tsf.2010.12.030 | - |
dc.identifier.scopusid | 2-s2.0-79952317010 | - |
dc.identifier.wosid | 000289174300046 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.519, no.10, pp.3272 - 3275 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 519 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 3272 | - |
dc.citation.endPage | 3275 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordAuthor | Dielectric properties | - |
dc.subject.keywordAuthor | Gadolinium oxide | - |
dc.subject.keywordAuthor | Capacitance voltage | - |
dc.subject.keywordAuthor | Photoluminescence | - |
dc.subject.keywordAuthor | Sol-gel | - |
dc.subject.keywordAuthor | Rare earth doping | - |
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