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Abnormal Dopant Distribution in POCl3-Diffused N+ Emitter of Textured Silicon Solar Cells
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ok, Young-Woo | - |
| dc.contributor.author | Rohatgi, Ajeet | - |
| dc.contributor.author | Kil, Yeon-Ho | - |
| dc.contributor.author | Park, Sung-Eun | - |
| dc.contributor.author | Kim, Dong-Hwan | - |
| dc.contributor.author | Lee, Joon-Sung | - |
| dc.contributor.author | Choi, Chel-Jong | - |
| dc.date.accessioned | 2021-09-07T14:29:41Z | - |
| dc.date.available | 2021-09-07T14:29:41Z | - |
| dc.date.created | 2021-06-14 | - |
| dc.date.issued | 2011-03 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/112918 | - |
| dc.description.abstract | We investigated 2-D dopant distribution in a POCl3-diffused n(+) emitter formed on textured Si solar cells using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and simulation results demonstrate that the convex and concave regions of a pyramid in the textured Si surface show deeper and shallower junctions, respectively. By considering a strong dependence of phosphorus (P) diffusion on the Si interstitials, the abnormal profile of n(+) emitter in the textured Si surface could be attributed to the inhomogeneous distribution of Si interstitials caused by the geometry of the pyramid texture. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.subject | PHOSPHORUS DIFFUSION | - |
| dc.subject | MICROSCOPY | - |
| dc.subject | MECHANISM | - |
| dc.subject | CONTACTS | - |
| dc.title | Abnormal Dopant Distribution in POCl3-Diffused N+ Emitter of Textured Silicon Solar Cells | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kim, Dong-Hwan | - |
| dc.identifier.doi | 10.1109/LED.2010.2098840 | - |
| dc.identifier.scopusid | 2-s2.0-79951941736 | - |
| dc.identifier.wosid | 000287658400043 | - |
| dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.32, no.3, pp.351 - 353 | - |
| dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
| dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
| dc.citation.volume | 32 | - |
| dc.citation.number | 3 | - |
| dc.citation.startPage | 351 | - |
| dc.citation.endPage | 353 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.subject.keywordPlus | PHOSPHORUS DIFFUSION | - |
| dc.subject.keywordPlus | MICROSCOPY | - |
| dc.subject.keywordPlus | MECHANISM | - |
| dc.subject.keywordPlus | CONTACTS | - |
| dc.subject.keywordAuthor | Junction | - |
| dc.subject.keywordAuthor | selective chemical etching | - |
| dc.subject.keywordAuthor | Si interstitial | - |
| dc.subject.keywordAuthor | solar cells | - |
| dc.subject.keywordAuthor | transmission electron microscopy (TEM) | - |
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