Emission enhancement from nonpolar a-plane III-nitride nanopillar
DC Field | Value | Language |
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dc.contributor.author | Kim, Byung-Jae | - |
dc.contributor.author | Jung, Younghun | - |
dc.contributor.author | Mastro, Michael A. | - |
dc.contributor.author | Hite, Jennifer | - |
dc.contributor.author | Nepal, Neeraj | - |
dc.contributor.author | Eddy, Charles R., Jr. | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-09-07T14:31:39Z | - |
dc.date.available | 2021-09-07T14:31:39Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-03 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/112929 | - |
dc.description.abstract | A nonpolar a-plane GaN-based light emitting structure was patterned by self-assembled SiO2 nanosphere lithography and subsequent inductively coupled plasma (ICP) etch to define an array of nanopillar light emitters. The photoluminescence (PL) intensity was enhanced by similar to 110% after the anisotropic ICP etch, compared with an unprocessed sample, which is attributed to a reduction in wave-guiding effects in the thin film. Additionally, the anisotropic ICP etch caused minimal wavelength shift in the dominant 3.34 eV near-bandedge radiative transition. A subsequent photoelectrochemical (PEC) etch process of the a-plane GaN nanopillars preferentially etched the underlying n-type layers, leaving a wider p-type cap. The n-type layers wet-etched by recession of the N-polar (000-1) plane (perpendicular to the a-plane growth axis) via formation of the distinctive pyramid-shaped facets. The PL intensity was enhanced by similar to 168% after ICP and PEC etching although the peak emission occurred at a lower energy. The combination of nanosphere lithography and ICP was highly effective in improving the light extraction efficiency in a-plane nonpolar GaN-based light emitting diodes. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3545696] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.subject | LIGHT-EMITTING-DIODES | - |
dc.subject | EXTRACTION EFFICIENCY | - |
dc.subject | GAN | - |
dc.subject | SURFACE | - |
dc.title | Emission enhancement from nonpolar a-plane III-nitride nanopillar | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1116/1.3545696 | - |
dc.identifier.scopusid | 2-s2.0-79953787262 | - |
dc.identifier.wosid | 000289166000009 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.29, no.2 | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 29 | - |
dc.citation.number | 2 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | EXTRACTION EFFICIENCY | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | SURFACE | - |
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