Resistive switching behavior in a Ni-Ag2Se-Ni nanowire
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, N. J. | - |
dc.contributor.author | An, B. H. | - |
dc.contributor.author | Koo, A. Y. | - |
dc.contributor.author | Ji, H. M. | - |
dc.contributor.author | Cho, J. W. | - |
dc.contributor.author | Choi, Y. J. | - |
dc.contributor.author | Kim, Y. K. | - |
dc.contributor.author | Kang, C. J. | - |
dc.date.accessioned | 2021-09-07T14:32:21Z | - |
dc.date.available | 2021-09-07T14:32:21Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-03 | - |
dc.identifier.issn | 0947-8396 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/112933 | - |
dc.description.abstract | Hysteretic resistive switching behavior in a silver selenide (Ag2Se) nanowire, which had a diameter of about 200 nm and a length of about 10 mu m, was studied using scanning probe microscopy. Electrical current measurements were carried out in a range from 0 to -10 V and in temperatures below and above the phase transition of Ag2Se. ON/OFF switching times were measured with pulsed voltages. They displayed different characteristics at low and high temperatures. The results confirm that Ag2Se nanowires have applications in nanoscale switching devices. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER | - |
dc.subject | SELENIDE THIN-FILMS | - |
dc.subject | SILVER SELENIDE | - |
dc.subject | SUPERIONIC CONDUCTORS | - |
dc.subject | PHASE-TRANSITION | - |
dc.subject | AG2SE | - |
dc.subject | AG2TE | - |
dc.subject | AG | - |
dc.subject | MAGNETORESISTANCE | - |
dc.subject | TEMPERATURE | - |
dc.subject | DYNAMICS | - |
dc.title | Resistive switching behavior in a Ni-Ag2Se-Ni nanowire | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Y. K. | - |
dc.identifier.doi | 10.1007/s00339-011-6319-y | - |
dc.identifier.scopusid | 2-s2.0-79959362806 | - |
dc.identifier.wosid | 000288253600015 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.102, no.4, pp.897 - 900 | - |
dc.relation.isPartOf | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | - |
dc.citation.title | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | - |
dc.citation.volume | 102 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 897 | - |
dc.citation.endPage | 900 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SELENIDE THIN-FILMS | - |
dc.subject.keywordPlus | SILVER SELENIDE | - |
dc.subject.keywordPlus | SUPERIONIC CONDUCTORS | - |
dc.subject.keywordPlus | PHASE-TRANSITION | - |
dc.subject.keywordPlus | AG2SE | - |
dc.subject.keywordPlus | AG2TE | - |
dc.subject.keywordPlus | AG | - |
dc.subject.keywordPlus | MAGNETORESISTANCE | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | DYNAMICS | - |
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