Electrical characteristics of nickel suicide-silicon heterojunction in suspended silicon nanowires
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hong, Su Heon | - |
dc.contributor.author | Kang, Myung Gil | - |
dc.contributor.author | Kim, Byung-Sung | - |
dc.contributor.author | Kim, Duk Soo | - |
dc.contributor.author | Ahn, Jae Hyun | - |
dc.contributor.author | Whang, Dongmok | - |
dc.contributor.author | Sull, Sang Hoon | - |
dc.contributor.author | Hwang, Sung Woo | - |
dc.date.accessioned | 2021-09-07T15:40:41Z | - |
dc.date.available | 2021-09-07T15:40:41Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-02 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/113173 | - |
dc.description.abstract | Electronic characteristics of silicide/silicon interface were studied in the suspended, chemically synthesized silicon nanowires (SiNWs). Step-by-step intrusion of a silicide/Si interface along the axial direction of a suspended silicon nanowire was performed by repeated thermal annealing cycles, and the current-voltage (I-V) characteristics of the annealed silicide/SiNW/silicide structure were measured at each cycle. The intruded length of the silicide was found to be directly proportional to the total annealing time, but the rate of silicidation was much smaller than previous works on similar silicide/SiNWs. A structural kink with Ni atoms diffused along the sidewall created a secondary source of silicidation, resulting in anomalous I-V characteristics. The measured I-V including this unintentional silicidation in the Si channel was explained by various combinations of Schottky barriers and resistors. (C) 2010 Elsevier Ltd. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | BUILDING-BLOCKS | - |
dc.subject | HETEROSTRUCTURES | - |
dc.subject | SEGREGATION | - |
dc.subject | DEVICES | - |
dc.title | Electrical characteristics of nickel suicide-silicon heterojunction in suspended silicon nanowires | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Sull, Sang Hoon | - |
dc.contributor.affiliatedAuthor | Hwang, Sung Woo | - |
dc.identifier.doi | 10.1016/j.sse.2010.11.012 | - |
dc.identifier.scopusid | 2-s2.0-78751643908 | - |
dc.identifier.wosid | 000287272000023 | - |
dc.identifier.bibliographicCitation | SOLID-STATE ELECTRONICS, v.56, no.1, pp.130 - 134 | - |
dc.relation.isPartOf | SOLID-STATE ELECTRONICS | - |
dc.citation.title | SOLID-STATE ELECTRONICS | - |
dc.citation.volume | 56 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 130 | - |
dc.citation.endPage | 134 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | BUILDING-BLOCKS | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | SEGREGATION | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordAuthor | Silicon nanowire | - |
dc.subject.keywordAuthor | Electron transport | - |
dc.subject.keywordAuthor | Silicide-silicon heterojunction | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.