In-Situ Detection of C-Reactive Protein Using Silicon Nanowire Field Effect Transistor
DC Field | Value | Language |
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dc.contributor.author | Kwon, Soon Mook | - |
dc.contributor.author | Kang, Gil Bum | - |
dc.contributor.author | Kim, Yong Tae | - |
dc.contributor.author | Kim, Young-Hwan | - |
dc.contributor.author | Ju, Byeong-Kwon | - |
dc.date.accessioned | 2021-09-07T15:50:35Z | - |
dc.date.available | 2021-09-07T15:50:35Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-02 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/113199 | - |
dc.description.abstract | Label-free, sensitive, and real-time c-reactive protein (CRP) sensor was fabricated using p-type silicon nanowire (SiNW) based structures configured as field effect transistors (FET) using the conventional 'top-down' semiconductor processes. The width of SiNWs were distributed 80 nm to 400 nm. Among them to improve signal-to-noise ratio and sensitivity of SiNW FET, 221 nm-SiNW was chosen for biosensing of CRP. Antibody of c-reactive protein (anti-CRP) was immobilized on the SiNW surface through polydimethylsiloxane (PDMS) microfluidic channel for detection of CRP. Specific binding of CRP with anti-CRP on the SiNW surface caused a conductance change of SiNW FET and various injections from 10 and 1 mu g/ml to 100 ng/ml solutions of CRP resulted in the conductance changes from 39 and 25 to 16%, respectively. Label-free, in-situ and very sensitive electrical detection of CRP was demonstrated with the prepared SiNW FET. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.subject | SENSOR ARRAYS | - |
dc.subject | LABEL-FREE | - |
dc.subject | ELECTRICAL DETECTION | - |
dc.title | In-Situ Detection of C-Reactive Protein Using Silicon Nanowire Field Effect Transistor | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Yong Tae | - |
dc.contributor.affiliatedAuthor | Kim, Young-Hwan | - |
dc.contributor.affiliatedAuthor | Ju, Byeong-Kwon | - |
dc.identifier.doi | 10.1166/jnn.2011.3417 | - |
dc.identifier.wosid | 000287167900107 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.2, pp.1511 - 1514 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 11 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 1511 | - |
dc.citation.endPage | 1514 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | SENSOR ARRAYS | - |
dc.subject.keywordPlus | LABEL-FREE | - |
dc.subject.keywordPlus | ELECTRICAL DETECTION | - |
dc.subject.keywordAuthor | Silicon Nanowire Field Effect Transistor | - |
dc.subject.keywordAuthor | Top-Down | - |
dc.subject.keywordAuthor | Biosensor | - |
dc.subject.keywordAuthor | C-Reactive Protein | - |
dc.subject.keywordAuthor | Label-Free | - |
dc.subject.keywordAuthor | Real-Time | - |
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