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Fabrication of Nanometer-Scale Carbon Nanotube Field-Effect Transistors on Flexible and Transparent Substrate
- Issue Date
- 2월-2011
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Nanometer-Scale; Carbon Nanotube; Field-Effect Transistor; Flexible; Transport Characteristics; Electron-Beam Lithography
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.2, pp.1393 - 1396
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 11
- Number
- 2
- Start Page
- 1393
- End Page
- 1396
- ISSN
- 1533-4880
- Abstract
- We have successfully fabricated nanometer-scale carbon nanotube field effect transistors (CNT FETs) on a flexible and transparent substrate by electron-beam lithography. The measured current-voltage data show good hole conduction FET characteristics, and the on/off ratio of the current is more than 10(2). The conductance (as well as current) systematically decreases with the increase of the strain, suggesting that the bending of the substrate still affects the deformation condition of the short channel CNT FETs.
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