A study of crystallinity in amorphous Si thin films for silicon heterojunction solar cells
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ji, Kwang-sun | - |
dc.contributor.author | Choi, Junghoon | - |
dc.contributor.author | Yang, Hyunjin | - |
dc.contributor.author | Lee, Heon-Min | - |
dc.contributor.author | Kim, Donghwan | - |
dc.date.accessioned | 2021-09-07T16:41:06Z | - |
dc.date.available | 2021-09-07T16:41:06Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2011-01 | - |
dc.identifier.issn | 0927-0248 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/113414 | - |
dc.description.abstract | In this work we analyzed the crystallinity of hydrogenated amorphous Si thin films deposited on n-type Si substrates using the effective medium approximation (EMA) method of a spectroscopic ellipsometer (SE) and evaluated their passivation quality by measuring effective carrier lifetime (tau(eff)) and implied V-oc using quasi-steady-state photo conductance decay (QSSPC) simultaneously. The crystalline volume fraction of doped a-Si:H layers using RF-PECVD was controlled from similar to 0% (nearly full amorphous phase) to above 90% (nearly polycrystalline phase) through varying deposition conditions. The passivation property depended on the crystallinity more strongly for p-a-Si:H than n-a-Si:H of which crystallinity was more sensitive to deposition rate relatively. The implied V-oc above 650 mV was achieved with crystallinity less than about 5% for p-a-Si:H and 20% for n-a-Si:H. The HRTEM images confirmed the reliability of SE analysis with EMA modeling and showed the maximum part of crystalline phase exists at the interface of a-Si:H and c-Si in the form of epitaxial growth configuration. By the optimization of each a-Si:H deposition conditions 17.17% the cell efficiency was accomplished on non-textured substrate. (C) 2010 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | A study of crystallinity in amorphous Si thin films for silicon heterojunction solar cells | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Donghwan | - |
dc.identifier.doi | 10.1016/j.solmat.2010.04.056 | - |
dc.identifier.wosid | 000287013800051 | - |
dc.identifier.bibliographicCitation | SOLAR ENERGY MATERIALS AND SOLAR CELLS, v.95, no.1, pp.203 - 206 | - |
dc.relation.isPartOf | SOLAR ENERGY MATERIALS AND SOLAR CELLS | - |
dc.citation.title | SOLAR ENERGY MATERIALS AND SOLAR CELLS | - |
dc.citation.volume | 95 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 203 | - |
dc.citation.endPage | 206 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Energy & Fuels | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Energy & Fuels | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | Hetero-interface | - |
dc.subject.keywordAuthor | Ellipsometric analysis | - |
dc.subject.keywordAuthor | Crystallinity | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.