실리콘 이종 접합 태양 전지 특성에 대한 ZnO:Al과 비정질 실리콘 계면 반응의 영향
DC Field | Value | Language |
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dc.contributor.author | 강민구 | - |
dc.contributor.author | 탁성주 | - |
dc.contributor.author | 이종한 | - |
dc.contributor.author | 김찬석 | - |
dc.contributor.author | 정대영 | - |
dc.contributor.author | 이정철 | - |
dc.contributor.author | 윤경훈 | - |
dc.contributor.author | 김동환 | - |
dc.date.accessioned | 2021-09-07T17:35:23Z | - |
dc.date.available | 2021-09-07T17:35:23Z | - |
dc.date.created | 2021-06-17 | - |
dc.date.issued | 2011 | - |
dc.identifier.issn | 1225-0562 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/113702 | - |
dc.description.abstract | Silicon heterojunction solar cells have been studied by many research groups. In this work, silicon heterojunction solar cells having a simple structure of Ag/ZnO:Al/n type a-Si:H/p type c-Si/Al were fabricated. Samples were fabricated to investigate the effect of transparent conductive oxide growth conditions on the interface between ZnO:Al layer and a-Si:H layer. One sample was deposited by ZnO:Al at low working pressure. The other sample was deposited by ZnO:Al at alternating high working pressure and low working pressure. Electrical properties and chemical properties were investigated by light I-V characteristics and AES method, respectively. The light I-V characteristics showed better efficiency on sample deposited by ZnO:Al by alternating high working pressure and low working pressure. Atomic concentrations and relative oxidation states of Si, O, and Zn were analyzed by AES method. For poor efficiency samples, Si was diffused into ZnO:Al layer and O was diffused at the interface of ZnO:Al and Si. Differentiated O KLL spectra, Zn LMM spectra, and Si KLL spectra were used for interface reaction and oxidation state. According to AES spectra, sample deposited by high working pressure was effective at reducing the interface reaction and the Si diffusion. Consequently, the efficiency was improved by suppressing the SiO_x formation at the interface. | - |
dc.language | Korean | - |
dc.language.iso | ko | - |
dc.publisher | 한국재료학회 | - |
dc.title | 실리콘 이종 접합 태양 전지 특성에 대한 ZnO:Al과 비정질 실리콘 계면 반응의 영향 | - |
dc.title.alternative | Effect of Interface Reaction between ZnO:Al and Amorphous Silicon on Silicon Heterojunction Solar Cells | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | 탁성주 | - |
dc.contributor.affiliatedAuthor | 이종한 | - |
dc.contributor.affiliatedAuthor | 김동환 | - |
dc.identifier.bibliographicCitation | 한국재료학회지, v.21, no.2, pp.120 - 124 | - |
dc.relation.isPartOf | 한국재료학회지 | - |
dc.citation.title | 한국재료학회지 | - |
dc.citation.volume | 21 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 120 | - |
dc.citation.endPage | 124 | - |
dc.type.rims | ART | - |
dc.identifier.kciid | ART001530599 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.subject.keywordAuthor | silicon heterojunction solar cell | - |
dc.subject.keywordAuthor | interface reaction | - |
dc.subject.keywordAuthor | amorphous silicon | - |
dc.subject.keywordAuthor | ZnO | - |
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